Results 41 to 50 of about 8,394,012 (247)
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj +4 more
wiley +1 more source
Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C ...
Cong Chen +3 more
doaj +1 more source
Bio‐Inspired Artificial Ionic Mechanoreceptor
A skin‐inspired artificial mechanoreceptor based on ionic interactions is presented for biomimetic tactile sensing. Pressure‐driven ionic redistribution within microfluidic channels generates a self‐powered electrical signal without external bias. The generated waveform exhibits mechanoreceptor‐like temporal features, including overshoot and undershoot,
Mohammad Akbari +4 more
wiley +1 more source
This perspective presents recent advances in electrocatalytic nitrate reduction, focusing on reaction mechanisms, catalyst design, and electrolyzer configurations. Key challenges in selectivity, stability, and practical wastewater treatment are highlighted, while future directions for advancing sustainable ammonia synthesis and nitrate remediation are ...
Xintong Li +9 more
wiley +1 more source
Enhancement-mode tri-gate GaN MIS-HEMTs with PEALD-AlN/HfO2 dual-gate dielectric [PDF]
In this study, we demonstrate a PEALD-AlN/HfO2 dual-gate dielectric normally-off GaN high-electron-mobility transistor (HEMT) with a recess-tri-gate architecture.
Rahul Rai +4 more
doaj +1 more source
Commercial off-the-shelf (COTS) field-programmable gate arrays (FPGAs) with a 28-nm process have become popular devices for computing systems. Although current generation FPGAs have advantages over previous models, the phenomenon of circuit aging has ...
Zeyu Li +4 more
doaj +1 more source
Resonant standing waves generate large‐area lattices of liquid‐crystal topological defects that are permanently encoded into polymer coatings by photopolymerization. The preserved director architecture produces thermally reconfigurable surface topographies while maintaining programmable optical functionality, demonstrating a scalable strategy for ...
Jacques A. Peixoto +6 more
wiley +1 more source
Physics‐Grounded Materials Artificial Intelligence for Reliable Materials Discovery
Physics‐Grounded Materials AI (PhysMat AI) integrates physical priors, descriptors, constraints, verification, and data infrastructure into a unified full‐stack framework, enabling reliable, interpretable, and autonomous AI‐driven materials discovery.
Yuhang Wang +3 more
wiley +1 more source
Investigating bias temperature instability and threshold voltage shifts in indium tin oxide (ITO) transistors [PDF]
Ultrathin amorphous oxide semiconductors are emerging materials being considered for transistors in memory and various back-end-of-line applications, but their stability remains a concern.
Sumaiya Wahid, Alwin Daus, Eric Pop
doaj +1 more source
We investigate size‐dependent CO selectivity on Ag nanoparticles, where optimized Ag loading achieves nearly 100% Faradaic Efficiency for CO at −100 mA·cm−2. In situ SERS and XPS reveal the crucial role of optimized loading in catalytic performance. The Ag/C catalyst further exhibits bifunctional activity, enabling efficient electrolysis of CO2 and ...
Venkata S. R. K. Tandava +16 more
wiley +1 more source

