Results 61 to 70 of about 8,394,012 (247)

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Frontiers in Physics, 2020
The positive bias temperature instability (PBTI) reliability of buried InGaAs channel n-MOSFETs with an InP barrier layer and Al2O3 gate dielectric under medium field (2.7 MV/cm) and high field (5.0 MV/cm) are investigated in this paper.
Haiou Li, Kangchun Qu, Xi Gao, Yue Li, Yonghe Chen, Zhiping Zhou, Lei Ma, Fabi Zhang, Xiaowen Zhang, Tao Fu, Xingpeng Liu, Yingbo Liu, Tangyou Sun, Honggang Liu   +13 more
doaj   +1 more source

Thermal‐Driven Diode Polarity Switching From Competing Helical Superconducting States in WTe2/α‐Fe2O3 Heterostructures

Advanced Materials, EarlyView.
A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang, Grant Z. X. Yang, Zi‐Ting Sun, Xinhou Chen, Shishun Zhao, Chufan Chen, Chenhui Zhang, Fanrui Hu, K. T. Law, Hyunsoo Yang   +9 more
wiley   +1 more source

When Poor Exciton Dissociation Limits Photocurrents in Organic Solar Cells: Why Low Offset Non‐Fullerene Acceptor Blends Can't Be Efficient

Advanced Materials, EarlyView.
The energetic offset between the donor and the acceptor components in organic photoactive layers is central to the tradeoff between photovoltage and photocurrent losses. This Perspective covers the most important issues surrounding this topic in non‐fullerene acceptor blends, from the difficulty of accurately determining state energies and driving ...
Dieter Neher, Manasi Pranav
wiley   +1 more source

Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors

Micromachines
This study reveals the pronounced density of oxygen vacancies (Vo) at the back channel of back-channel-etched (BCE) a-InGaZnO (a-IGZO) thin-film transistors (TFTs) results from the sputtered deposition rather than the wet etching process of the source ...
Shimin Ge, Juncheng Xiao, Shan Li, Dong Yuan, Yuhua Dong, Shengdong Zhang   +5 more
doaj   +1 more source

Confronting the Variability Issues Affecting the Performance of Next-Generation SRAM Design to Optimize and Predict the Speed and Yield

IEEE Access, 2014
Effectively confronting device and circuit parameter variations to maintain or improve the design of high performance and energy efficient systems while satisfying historical standards for reliability and lower costs is increasingly challenging with the ...
Jeren Samandari-Rad, Matthew Guthaus, Richard Hughey   +2 more
doaj   +1 more source

A Geometrically Transient Platform for Bioelectronic Implants

Advanced Materials, EarlyView.
Minimally invasive bioelectronic implants often compromise performance for smaller sizes. To resolve this optimization dilemma, a wireless bioelectronic implant with a transient geometry is introduced (MiFi). The origami‐inspired device miniaturizes up to sixfold for syringe insertion and autonomously unfolds post‐implantation.
Selin Olenik, John D. Goodwin, Atharv Naik, Philip Coatsworth, Ioi Chit Cheung, Farbod Amirghasemi, Anies Sohi, Ehsan Abedi, Tayeb Tadlaoui, Maral P. S. Mousavi, Andriy S. Kozlov, Victoria Salem, Andrew S. Cowburn, Firat Guder   +13 more
wiley   +1 more source

Instability of p-channel poly-Si thin-film transistors under dynamic negative bias temperature stress

, 2010
Degradation of p-channel poly-Si thin-film transistors (TFTs) under dynamic negative bias temperature (NBT) stress has been investigated. Two-stage degradation behavior is first observed.
Zhou, Jie, Jie Zhou, Wong, Man, Mingxiang Wang, Wang, Mingxiang, Man Wong   +5 more
core   +1 more source

Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature

Advanced Materials, EarlyView.
We demonstrate the realization of a novel ferroelectric‐like two‐dimensional electron gas (2DEG) based on the epitaxial interface between SrO‐terminate SrTiO3 and ferroeletric KNb0.5Na0.5O3${\rm KNb}_{0.5}{\rm Na}_{0.5}{\rm O}_3$ thin films. We show nonvolatile control of the transport properties enabling spatially reconfigurable devices in which ...
Martando Rath, Yu Chen, Daniela Stornaiuolo, Aravind Raji, Alexandre Gloter, Antonio Cassinese, Andrea Rubano, Alessia Sambri, Domenico Paparo, Emiliano Di Gennaro, Jérôme Lecourt, Wilfrid Prellier, Francesco Rosa, Nicholas B. Brookes, Giacomo Ghiringhelli, Daniele Preziosi, Marco Salluzzo   +16 more
wiley   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Advanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert, Salva Salmani‐Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long‐Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi   +11 more
wiley   +1 more source

(Invited) Charge Trapping and the Negative Bias Temperature Instability

, 2010
During the last couple of years new measurement techniques have provided insight into the physics behind the negative bias temperature instability (NBTI) and indicate that the recoverable component of NBTI is due to some kind of charge trapping.
Grasser, Tibor, Schanovsky, Franz, Hehenberger, Philipp, Philipp Hehenberger, Franz Schanovsky, Paul-Juergen Wagner, Goes, Wolfgang, Wolfgang Goes, Tibor Grasser, Wagner, Paul-Juergen   +9 more
core   +1 more source