Results 51 to 60 of about 23,788 (263)

Aging Analysis and Degradation Prediction of PLL Circuits in 14-nm FinFET Technology

IEEE Journal of the Electron Devices Society
This work investigates the reliability and aging predictions in a 14-nm FinFET-based analog circuit under high-temperature conditions. Aging simulations and accelerated aging tests were carried out on key devices of phase-locked loop (PLL) circuits, with
Meng Li, Xin Xu, Xianghui Li, Yunpeng Li, Yiqun Shi, Qingqing Sun, Hao Zhu   +6 more
doaj   +1 more source

When Poor Exciton Dissociation Limits Photocurrents in Organic Solar Cells: Why Low Offset Non‐Fullerene Acceptor Blends Can't Be Efficient

Advanced Materials, EarlyView.
The energetic offset between the donor and the acceptor components in organic photoactive layers is central to the tradeoff between photovoltage and photocurrent losses. This Perspective covers the most important issues surrounding this topic in non‐fullerene acceptor blends, from the difficulty of accurately determining state energies and driving ...
Dieter Neher, Manasi Pranav
wiley   +1 more source

A Weighted NBTI/HCD Coupling Model in Full VG/VD Bias Space with Applications to SRAM Aging Simulation

Micromachines
In this paper, a coupled negative bias temperature instability (NBTI)/hot carrier degradation (HCD) failure model is proposed on the 2-D voltage plane for aging simulation of SRAM circuits.
Zhen Chai, Zhenyu Wu
doaj   +1 more source

Light‐Programmed Localized Supersaturation Enables Ambient Aqueous Synthesis of Highly Crystalline Metal–Organic Frameworks

Advanced Materials, EarlyView.
In the proposed model, a photoinduced nanoreactor uses Cu2O self‐photooxidation to generate localized supersaturation. A metastable supersaturation state first forms a shell, creating a spatially confined environment that restricts reactant exchange; continued Cu release then drives the local environment toward a labile regime that favors predominantly
Yongdeok Ahn, Seunghyeon Jeong, Sun Ho Park, Juhyeong Cho, Nak Cheon Jeong, Daeha Seo   +5 more
wiley   +1 more source

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Frontiers in Physics, 2020
The positive bias temperature instability (PBTI) reliability of buried InGaAs channel n-MOSFETs with an InP barrier layer and Al2O3 gate dielectric under medium field (2.7 MV/cm) and high field (5.0 MV/cm) are investigated in this paper.
Haiou Li, Kangchun Qu, Xi Gao, Yue Li, Yonghe Chen, Zhiping Zhou, Lei Ma, Fabi Zhang, Xiaowen Zhang, Tao Fu, Xingpeng Liu, Yingbo Liu, Tangyou Sun, Honggang Liu   +13 more
doaj   +1 more source

In Situ Formation of a Highly Selective Nickel Single Atom Catalyst for Electrochemical CO2 Reduction to CO

Advanced Materials, EarlyView.
Development of a novel method for synthesizing Ni single atom catalysts for highly selective electrochemical CO2 reduction in situ. This catalyst achieves 100% selectivity for CO and is formed in an industrially relevant cell architecture. Using post‐mortem XRD, STEM, and EDS and operando XAS, the identity of the active site and the mechanism behind ...
Ian Street, Venkata Sai Sriram Mosali, Noah Sandberg, Fengyuan Shi, Deborah Myers, William E. Mustain   +5 more
wiley   +1 more source

Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors

Micromachines
This study reveals the pronounced density of oxygen vacancies (Vo) at the back channel of back-channel-etched (BCE) a-InGaZnO (a-IGZO) thin-film transistors (TFTs) results from the sputtered deposition rather than the wet etching process of the source ...
Shimin Ge, Juncheng Xiao, Shan Li, Dong Yuan, Yuhua Dong, Shengdong Zhang   +5 more
doaj   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

Advanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu, Junjie Zhao, Richard Schroedter, Jason Vincent, Hampus Hoffman, Leif Riemenschneider, Abdallh Herbawe, Hao Shen, Ronald Tetzlaff, Stefan Slesazeck, Gianaurelio Cuniberti, Thomas Mikolajick, Benjamin Max   +12 more
wiley   +1 more source

Confronting the Variability Issues Affecting the Performance of Next-Generation SRAM Design to Optimize and Predict the Speed and Yield

IEEE Access, 2014
Effectively confronting device and circuit parameter variations to maintain or improve the design of high performance and energy efficient systems while satisfying historical standards for reliability and lower costs is increasingly challenging with the ...
Jeren Samandari-Rad, Matthew Guthaus, Richard Hughey   +2 more
doaj   +1 more source

Life‐Like Ferrous Oxide Microspheres from Kombucha

Advanced Materials Interfaces, EarlyView.
Kombucha bacterial cellulose, sodium alginate, and ferrous nitrate self‐assemble into membrane‐enclosed iron oxide microspheres. These microspheres bud daughter vesicles, sustain 24‐h electrochemical oscillations, and filter theta‐band signals.
Panagiotis Mougkogiannis, Anna Nikolaidou, Andrew Adamatzky   +2 more
wiley   +1 more source