Results 51 to 60 of about 8,394,012 (247)

Method Under Bias Temperature Instability Conditions

, 2023
Gate-oxide degradation has been one of the major reliability challenges of SiC mosfets. Comprehensive and accurate localization of gate-oxide degradation under bias temperature instability (BTI) conditions is important to improve the device reliability ...
Zhong Chen, Hui Wang, Zhibin Zhao, Manhong Zhang, Sun, Peng,, Chen, Cong,, Li, Xuebao,, Wang, Hui,, Yumeng Cai, Cai, Yumeng,, Zhang, Manhong,, Chen, Zhong,, Zhao, Zhibin,, Cong Chen, Hans-Peter Nee, Peng Sun, Xuebao Li, Nee, Hans-Peter,   +17 more
core   +1 more source

Cellular Responses to Mechanical Cues Across Scales: From Fundamental Insights to Translational Potential

Advanced Healthcare Materials, EarlyView.
This review examines how cellular behavior is regulated by mechanical cues transmitted through soft biomaterials, from single‐cell mechanosensing to tissue‐level adaptation. It highlights why physiological relevance, rather than model complexity alone, is critical for translational mechanobiology and introduces a scoring framework linking material ...
Mathias Polz, Manuel P. Kainz, Niklas Haider, Theresa Rienmüller, Kerstin Lenk, Rupert Kargl, Michele Terzano, Gerhard Sommer, Gerhard A. Holzapfel, Julia Fuchs   +9 more
wiley   +1 more source

Temperature-dependent electrical characteristics of selectively crystallized InGaOx gate-all-around nanosheet FETs

Applied Physics Express
We investigate the temperature-dependent electrical characteristics and bias-temperature-instability (BTI) of InGaOx gate-all-around (GAA) nanosheet FETs with different HfO _2 thicknesses. The 5 nm-HfO _2 GAA device shows higher transconductance (1550 μS
Anlan Chen, Ki-Woong Park, Xingyu Huang, Kota Sakai, Masaharu Kobayashi   +4 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Aging Analysis and Degradation Prediction of PLL Circuits in 14-nm FinFET Technology

IEEE Journal of the Electron Devices Society
This work investigates the reliability and aging predictions in a 14-nm FinFET-based analog circuit under high-temperature conditions. Aging simulations and accelerated aging tests were carried out on key devices of phase-locked loop (PLL) circuits, with
Meng Li, Xin Xu, Xianghui Li, Yunpeng Li, Yiqun Shi, Qingqing Sun, Hao Zhu   +6 more
doaj   +1 more source

Design of Negative Bias Temperature Instability (NBTI) Tolerant Register File [PDF]

, 2011
Negative Bias Temperature Instability (NBTI) is becoming a major reliability problem in the semiconductor industry. As time passes, NBTI reduces the capacity of performing correct computations in the microprocessor.
Saurabh Kothawade, Kothawade, Saurabh
core   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

A Weighted NBTI/HCD Coupling Model in Full VG/VD Bias Space with Applications to SRAM Aging Simulation

Micromachines
In this paper, a coupled negative bias temperature instability (NBTI)/hot carrier degradation (HCD) failure model is proposed on the 2-D voltage plane for aging simulation of SRAM circuits.
Zhen Chai, Zhenyu Wu
doaj   +1 more source