Results 71 to 80 of about 23,788 (263)

Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

The Scientific World Journal, 2014
We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the
H. Hussin, N. Soin, M. F. Bukhori, S. Wan Muhamad Hatta, Y. Abdul Wahab   +4 more
doaj   +1 more source

High‐Throughput Data Generation and Transfer Learning Enabled Microstructure‐Property Integrated Design of Nickel‐Based Powder Metallurgy Superalloy

Advanced Science, EarlyView.
An integrated transfer learning framework integrates CALPHAD simulations, diffusion‐multiple experiments, and literature data to predict long‐term microstructural stability and short‐term mechanical properties of Ni‐based powder metallurgy superalloys. Based on these model predictions, a high‐performance, low‐density alloy, USTB‐PM750, is designed from
Zixin Li, Hongtao Zhang, Zichao Peng, Yuheng Zhang, Qian Lv, Yihuan Cao, Xuqing Wang, Huadong Fu, Jianxin Xie   +8 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Study on the Relationship Between Threshold Voltage Instability and Gate Leakage Current in p-GaN HEMTs

IEEE Journal of the Electron Devices Society
This work uncovers a temperature-dependent relationship between gate leakage current ( $\mathrm{I}_{\mathrm{G}}$ ) and threshold voltage shift ( $\Delta \mathrm{V}_{\mathrm{TH}}$ ) through an evaluation combining deep level transient spectroscopy (DLTS ...
Yifan Cui, Yang Jiang, Yutian Gan, Qiaoyu Hu, Qing Wang, Hongyu Yu   +5 more
doaj   +1 more source

Power/Energy Minimization Techniques for Variability-Aware High-Performance 16-nm 6T-SRAM

IEEE Access, 2016
Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and ...
Jeren Samandari-Rad, Richard Hughey
doaj   +1 more source

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors

Advanced Science, EarlyView.
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu, Jikang Xu, Yongqing Jia, Wenxuan Wang, Weifeng Zhang, Biao Yang, Xiaobing Yan   +6 more
wiley   +1 more source

Trap Dynamics and Long-Term Reliability in Depletion-Mode GaN HEMTs Under Sequential Electrical Stress

Energies
The long-term electrical stability of GaN high-electron-mobility transistors (HEMTs) is strongly influenced by charge trapping under electrical stress, which can affect threshold voltage (VTH), on-resistance (RDS), and gate leakage current (IGS). In this
Tsuriel Avraham, Joseph B. Bernstein
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Machine Learning‐Assisted KCl‐CaCl2‐LiCl Electrolyte Design for Low‐Temperature, High‐Performance Calcium‐Based Liquid Metal Batteries

Advanced Science, EarlyView.
A machine learning‐assisted framework optimizes the KCl‐CaCl2‐LiCl ternary electrolyte. The optimized 13:35:52 mol% composition enables Ca‐based liquid metal batteries to operate stably at 480 °C, with >99.5% coulombic efficiency, ultralow self‐discharge, and excellent cycling stability, advancing low‐temperature large‐scale energy storage.
Xinglin Zhou, Lei Huang, Yan Zhou, Xiaohui Ning   +3 more
wiley   +1 more source

Research progress and challenges in the reliability of SiGe channel CMOS device

Gongneng cailiao yu qijian xuebao
As complementary metal-oxide-semiconductor (CMOS) technology scales down to the 5 nm node and beyond, SiGe channels have become a promising solution for high-performance p-type field-effect transistor (pFET) due to their superior hole mobility, with ...
Guoqixin HUANG, Yiming QU, Choonghyun LEE   +2 more
doaj   +1 more source