Results 81 to 90 of about 8,394,012 (247)

Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

The Scientific World Journal, 2014
We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the
H. Hussin, N. Soin, M. F. Bukhori, S. Wan Muhamad Hatta, Y. Abdul Wahab   +4 more
doaj   +1 more source

Spike‐Type Band Alignment via in2Se3/CuI Charge‐Transport Engineering Enables 26% Efficient Lead‐Free RbSn0.5Ge0.5I3 Perovskite Solar Cells

Advanced Materials Interfaces, EarlyView.
A lead‐free and Cd‐free RbSn₀.5Ge₀.5I3 perovskite solar cell is optimized through In2Se3/CuI charge‐transport engineering using SCAPS‐1D. Spike‐type band alignment suppresses interfacial recombination, enhances charge extraction, and achieves a power conversion efficiency of 26.01%, providing an effective strategy for high‐performance and ...
Md. Al Amin, Md. Sanwar Hossain, Md. Feroz Ali, Md Shafiul Alam, Mohammad Ali, Mohammed A. AlAqil   +5 more
wiley   +1 more source

Negative Bias Temperature Instability for P-channel of LTPS Thin Film Transistors with Fluorine Implantation

, 2008
This paper studies the impact of LTPS (low temperature polycrystalline silicon) TFTs with fluorine implantation under NBTI (Negative bias temperature instability) stress.
W. H. Sung, Chyuan-Haur Kao
core   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Power/Energy Minimization Techniques for Variability-Aware High-Performance 16-nm 6T-SRAM

IEEE Access, 2016
Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and ...
Jeren Samandari-Rad, Richard Hughey
doaj   +1 more source

Impact of Negative Bias Temperature Instability on FPGAs

, 2005
In this sliide presentation the statistical impact of PMOS Negative Bias Temperature Instability (NBTI) degradation on circuit delay is reviewed. An on-board timing circuitry that was been developed to detect and measure timing delays in SRAM-based LUT ...
Burke, Gary, Chen, Yuan, Sheldon, Doug, Nguyen, Tien, Roosta, Ramin   +4 more
core  

High Voltage Device Negative Bias Temperature Instability Improvement with Different Process Conditions

, 2011
Drastically device dimension shrinkage and rigorous requirement in automotive era puts Negative Bias Temperature Instability (NBTI) at the forefront of reliability issue recently.
Sang Sool Koo, Deb Kumar Pal, Poh Ching Sim   +2 more
core   +1 more source

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

Advanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli, Dhanush Patil, Libin Yang, M. Taylor Sobczak, Anshul Kulkarni, Xiao Sun, Arunachalam Ramanathan, Tiantian Li, Ramaraja P. Ramasamy, Jason J. Locklin, Yanyu Chen, Xianqiao Wang, Arunachala Mada Kannan, Kenan Song   +13 more
wiley   +1 more source

Study on the Relationship Between Threshold Voltage Instability and Gate Leakage Current in p-GaN HEMTs

IEEE Journal of the Electron Devices Society
This work uncovers a temperature-dependent relationship between gate leakage current ( $\mathrm{I}_{\mathrm{G}}$ ) and threshold voltage shift ( $\Delta \mathrm{V}_{\mathrm{TH}}$ ) through an evaluation combining deep level transient spectroscopy (DLTS ...
Yifan Cui, Yang Jiang, Yutian Gan, Qiaoyu Hu, Qing Wang, Hongyu Yu   +5 more
doaj   +1 more source

Poststress recovery mechanism of the negative bias temperature instability based on dispersive transport

, 2007
A mechanism based on dispersive diffusion of hydrogen in the bulk of gate dielectrics is proposed to account for the poststress recovery characteristics of negative bias temperature instability in p-channel metal-oxide-semiconductor field effect ...
Kang, Jinfeng, J. P. Wang, Wang, J. P., Liao, C. C., Z. H. Gan, Baoguang Yan, Gan, Z. H., Jinfeng Kang, M. Liao, Wong, W., Yan, Baoguang, W. Wong, Ruqi Han, Jingfeng Yang, Yang, Jingfeng, Han, Ruqi, C. C. Liao, Liu, Xiaoyan, Xiaoyan Liu, Liao, M.   +19 more
core   +1 more source