Results 101 to 110 of about 8,394,012 (247)

High‐Throughput Data Generation and Transfer Learning Enabled Microstructure‐Property Integrated Design of Nickel‐Based Powder Metallurgy Superalloy

Advanced Science, EarlyView.
An integrated transfer learning framework integrates CALPHAD simulations, diffusion‐multiple experiments, and literature data to predict long‐term microstructural stability and short‐term mechanical properties of Ni‐based powder metallurgy superalloys. Based on these model predictions, a high‐performance, low‐density alloy, USTB‐PM750, is designed from
Zixin Li, Hongtao Zhang, Zichao Peng, Yuheng Zhang, Qian Lv, Yihuan Cao, Xuqing Wang, Huadong Fu, Jianxin Xie   +8 more
wiley   +1 more source

Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing

IEEE Journal of the Electron Devices Society
In this paper, we investigate the evolution of hydrogen (H) behavior in back-gated IGZO/HfO2 transistors subjected to low-temperature annealing (200 °C in air), focusing on its impact on initial electrical characteristics (Id-Vg) and ...
Liang Xiang, Gangping Yan, Hong Yang, Shangbo Yang, Gaobo Xu, Mingyang Sun, Guilei Wang, Huaxiang Yin, Xiaolei Wang, Jun Luo, Wenwu Wang   +10 more
doaj   +1 more source

A Two-Stage Model for Negative Bias Temperature Instability,” in

, 2009
-Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over
Siegfried Selberherr, Tibor Grasser
core  

Statistical Study of Bias Temperature Instabilities by Means of 3D 'Atomistic' Simulation

, 2013
This chapter presents a comprehensive simulation study of the reliability performance in contemporary bulk MOSFET devices. With the CMOS technology entering in the nanoscale era, the statistical variability due to random dopant fluctuations plays a ...
Amoroso, SM, Markov, SN, Asen Asenov, Gerer, L, Salvatore Maria Amoroso, Stanislav Markov, Fikru Adamu-Lema, Louis Gerrer, Adamu-Lema, F, Asenov, A   +9 more
core   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors

Advanced Science, EarlyView.
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu, Jikang Xu, Yongqing Jia, Wenxuan Wang, Weifeng Zhang, Biao Yang, Xiaobing Yan   +6 more
wiley   +1 more source

Modeling of negative bias temperature instability, Journal of Telecommunications and Information Technology, 2007, nr 2 [PDF]

, 2007
Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over ...
Grasser, Tibor, Selberherr, Siegfried
core   +1 more source

Negative Bias Temperature Instability Analysis of Multi-Bridged-Channel CFETs [PDF]

Complementary Field-Effect Transistors (CFETs) are among the most promising candidates for next-generation technology nodes due to their potential for aggressive footprint scaling, improved density, and reduced parasitics through vertical integration ...
Thoti, Narasimhulu, Komsa, Hannu-Pekka
core   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Real-Time Monitoring Method and Circuit Based on Built-In Reliability Prediction

Micromachines
The failure of different chips under working conditions is influenced by various stress states such as different voltages, temperatures, stress durations, and stress variations.
Wenke Ren, Yanning Chen, Xiaoming Li, Xinjie Zhou, Baichen Song, Tianci Chang   +5 more
doaj   +1 more source