Results 91 to 100 of about 8,394,012 (247)
A novel carbon fiber reinforcement for dielectric elastomer actuators enhances actuation force while decoupling electromechanical performance from the actuator's aspect ratio. Unlike conventional fiber reinforcements, it enables a uniform planar stretch state along the entire actuator.
Markus Koenigsdorff +8 more
wiley +1 more source
Negative Bias Temperature Instability And Charge Trapping Effects On Analog And Digital Circuit Reliability [PDF]
Nanoscale p-channel transistors under negative gate bias at an elevated temperature show threshold voltage degradation after a short period of stress time.
Yu, Yixin
core
LLM‐Integrated Human–Robot Interaction System for Microrobots
This paper proposes an LLM‐based control framework for guiding microrobots using human natural language. This framework can convert the natural human speech into safe and executable command sets for reliable navigation in complex environments. The experimental results show high accuracy and robustness in task performance, demonstrating the potential of
Bairong Zhu, Amar Salehi, Tingting Yu
wiley +1 more source
Research progress and challenges in the reliability of SiGe channel CMOS device
As complementary metal-oxide-semiconductor (CMOS) technology scales down to the 5 nm node and beyond, SiGe channels have become a promising solution for high-performance p-type field-effect transistor (pFET) due to their superior hole mobility, with ...
Guoqixin HUANG +2 more
doaj +1 more source
Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation
A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique.
Chia-Hsun Wu +9 more
doaj +1 more source
Design of a reliability methodology: Modelling the influence of temperature on gate Oxide reliability [PDF]
An Integrated Reliability Methodology (IRM) is presented that encompasses the changes that technology growth has brought with it and includes several new device degradation models.
Owens, Gethin Lloyd
core
Single‐cell longitudinal profiling reveals that androgen‐deprivation therapy induces a DPT+ fibroblast‐complement axis that suppresses macrophage inflammation and drives CD8+ T cell exhaustion in prostate cancer. Concurrently, resistant epithelial subpopulations persist and engage TSPAN1‐ and NRXN1‐mediated programs promoting CRPC and neuroendocrine ...
Yang Chen +19 more
wiley +1 more source
Laser‐induced graphene (LIG) provides a scalable, laser‐direct‐written route to porous graphene architecture with tunable chemistry and defect density. Through heterojunction engineering, catalytic functionalization, and intrinsic self‐heating, LIG achieves highly sensitive and selective detection of NOX, NH3, H2, and humidity, supporting next ...
Md Abu Sayeed Biswas +6 more
wiley +1 more source
Performance Instability of 650 V p-GaN Gate HEMTs under Temperature-Induced Negative Gate Bias Stresses [PDF]
In this article, the effect of negative gate bias stress and temperature on threshold voltage (Vth) and on-state resistance (Ron) instability of 650 V Schottky p-GaN gate HEMT devices from different manufacturers was explored.
Mellor, Phil, Yu, Renze, Jahdi, Saeed
core +1 more source
Integrative multi‐omics analysis delineates a mitochondrial–immune axis governing neoadjuvant chemotherapy response in high‐grade serous ovarian cancer. Immune‐active tumors exhibit enhanced B‐cell infiltration and favorable sensitivity, whereas metabolically rewired tumors display oxidative phosphorylation dependency and resistance.
Wei Jiang +11 more
wiley +1 more source

