Results 21 to 30 of about 8,394,012 (247)
Performance and Reliability Degradation of CMOS Image Sensors in Back-Side Illuminated Configuration
IEEE Journal of the Electron Devices Society, 2020 We present a systematic characterization of wafer-level reliability dedicated test structures in Back-Side-Illuminated CMOS Image Sensors. Noise and electrical measurements performed at different steps of the fabrication process flow, definitely ...
Andrea Vici +5 more
doaj +1 more source
Micromachines, 2023 We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD)
Stanislav Tyaginov +12 more
doaj +1 more source
Defects for random telegraph noise and negative bias temperature instability [PDF]
2016 China Semiconductor Technology International Conference (CSTIC), 2016 Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work. We examine the similarity and differences of the defects responsible for them.
Zhang, JF, Duan, M, Ji, Z, Zhang, WD
openaire +1 more source
Reliability analysis of buffer stage in mixed signal application [PDF]
Advances in Radio Science, 2011 This paper discusses reliability analysis of a buffer circuit targeted for an analog to digital converter application. The circuit designed in a 32 nm high-κ metal gate CMOS technology was investigated by circuit simulation and sensitivity analysis. This
S. More +3 more
doaj +1 more source
An Ageing-Aware and Temperature Mapping Algorithm for Multilevel Cache Nodes
IEEE Access, 2023 Increase in chip inactivity in the future threatens the performance of many-core systems and therefore, efficient techniques are required for continuous scaling of transistors.
Emmanuel Ofori-Attah +1 more
doaj +1 more source
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs
IEEE Journal of the Electron Devices SocietyIn this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures.
Myeongsu Chae +2 more
doaj +1 more source
DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY [PDF]
Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work.
Duan, M, Ji, Z, Zhang, JF, Zhang, WD
core +3 more sources
IEEE Access, 2020 The ageing phenomenon of negative bias temperature instability (NBTI) continues to challenge the dynamic thermal management of modern FPGAs. Increased transistor density leads to thermal accumulation and propagates higher and non-uniform temperature ...
Sohaib Aslam +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
MicromachinesThis work investigates bias-temperature instability (BTI) in 1700 V 4H-SiC MOSFETs under realistic 1 MHz switching conditions with simultaneous gate and drain stress.
Mamta Dhyani +3 more
doaj +1 more source