Results 11 to 20 of about 23,788 (263)
Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks
IEEE Journal of the Electron Devices Society, 2023 The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the
Yu Sun +7 more
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Data-Driven Modeling of Low Frequency Noise Using Capture-Emission Energy Maps
Applied Sciences, 2020 A new approach for modeling low frequency noise is presented to enable the predictions of noise behavior from negative bias temperature instability (NBTI). The noise model is based on a capture-emission energy (CEE) map describing the probability density
Jonghwan Lee
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Applied Sciences, 2021 The degradation effect of a field-programmable gate array becomes a significant issue due to the high density of logic circuits inside the field-programmable gate array. The degradation effect occurs because of the rapid technology scaling process of the
Anuar Jaafar +4 more
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Impact of NBTI Stress on VDMOSFET Regions
Algerian Journal of Signals and Systems, 2018 In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that
Sidi Mohammed Merah, Bouchra Nadji
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IEEE Journal of the Electron Devices Society, 2018 In this paper, we report on the electrical and thermal instability of β-Ga2O3 nanomembrane field-effect transistor with a bottom-gate configuration.
Jiyeon Ma, Oukjae Lee, Geonwook Yoo
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Impact of negative and positive bias temperature stress on 6T-SRAM cells [PDF]
Advances in Radio Science, 2009 With introduction of high-k gate oxide materials, the degradation effect <i>Positive Bias Temperature Instability</i> (PBTI) is starting to play an important role.
S. Drapatz +2 more
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Defects for random telegraph noise and negative bias temperature instability [PDF]
2016 China Semiconductor Technology International Conference (CSTIC), 2016 Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work. We examine the similarity and differences of the defects responsible for them.
Zhang, JF, Duan, M, Ji, Z, Zhang, WD
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NBTI and Power Reduction Using an Input Vector Control and Supply Voltage Assignment Method
Algorithms, 2017 As technology scales, negative bias temperature instability (NBTI) becomes one of the primary failure mechanisms for Very Large Scale Integration (VLSI) circuits.
Peng Sun +4 more
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Performance and Reliability Degradation of CMOS Image Sensors in Back-Side Illuminated Configuration
IEEE Journal of the Electron Devices Society, 2020 We present a systematic characterization of wafer-level reliability dedicated test structures in Back-Side-Illuminated CMOS Image Sensors. Noise and electrical measurements performed at different steps of the fabrication process flow, definitely ...
Andrea Vici +5 more
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Reliability analysis of buffer stage in mixed signal application [PDF]
Advances in Radio Science, 2011 This paper discusses reliability analysis of a buffer circuit targeted for an analog to digital converter application. The circuit designed in a 32 nm high-κ metal gate CMOS technology was investigated by circuit simulation and sensitivity analysis. This
S. More +3 more
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