Results 141 to 150 of about 1,852 (195)

Zero-Bias Photodetection and Opto-Synaptic Plasticity in BP/MoS₂ and WS₂/PdSe₂ van der Waals Heterostructures. [PDF]

ACS Appl Electron Mater
Durante O, Viscardi L, Mazzotti A, De Stefano S, Castellanos-Gomez A, Schleberger M, Di Bartolomeo A.   +6 more
europepmc   +1 more source

Flat-band quantum materials empowering self-adapted ultrabroadband detectors. [PDF]

Nat Commun
Li J, Ge X, Mi J, Wang H, Chen J, He R, Zhong F, Zhan M, Hu C, Wang Z, Zhou X, Xu X, Xu Z, Martyniuk P, Rogalski A, Wang F, Wang P, Liu Z, Li Q, Li L, Hu W.   +20 more
europepmc   +1 more source

Unveiling the Role of Fluorination in Suppressing Dark Current and Enhancing Photocurrent to Enable Thick-Film Near-Infrared Organic Photodetectors. [PDF]

Polymers (Basel)
Bai Y, Kwak SL, Ha JW, Hwang DH.
europepmc   +1 more source

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]

Adv Mater
Tailpied L, Gureghian C, Fossard F, Mérot JS, Rodriguez JB, Flores FG, Vincent G, Taliercio T, Fix B.   +8 more
europepmc   +1 more source

Development of Eu-doped CdS photodetectors with enhanced photodetection performance. [PDF]

Sci Rep
Al Mujamid SM, AlAbdulaal TH, Ashraf IM, Alshehri AM, Taukeer Khan M, Sangaraju S, Shkir M.   +6 more
europepmc   +1 more source

Advances in Near-Infrared Organic Photodetectors: Molecular Design, Exciton Dynamics, and Device Integration. [PDF]

Polymers (Basel)
Lee H, Kim J.
europepmc   +1 more source

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Plasmonic Resonance Enhanced Polarization-Sensitive Photodetection by Black Phosphorus in Near Infrared

ACS Nano, 2018
Black phosphorus, a recently intensely investigated two-dimensional material, is promising for electronic and optoelectronic applications due to its higher mobility and thickness-dependent direct band gap. With its low direct band gap and anisotropic properties in nature, black phosphorus is also suitable for near-infrared polarization-sensitive ...
Peide Ye, Xianfan Xu
exaly   +3 more sources

Atomic-Scale Interface Modification in Complex Oxide Heterojunctions for Near-Infrared Photodetection

ACS Nano
Photodetectors that detect near-infrared (NIR) light serve as important components in contemporary energy-efficient optoelectronic devices. However, detecting the low-energy photons of the NIR light has long been challenging since the ease of photoexcitation inevitably involves increasing the background current in the dark. Herein, we report the atomic-
Yongsoo Yang, Hyungwoo Lee
exaly   +3 more sources

Near-infrared Photodetection in Graphene/β-In2Se3 Heterostructure

Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC), 2020
Photoresponsivity of 1.17 A/W is observed in graphene/molecular beam epitaxy grown β-state In2Se3 photodetector at 1550 nm light excitation and 0.35 V bias, with smaller than 2 ms response time.
Wen Shao, Xiaoping Xie, Yunqiang Zheng, Wei Wang, Tiantian Li, Feifan Wang, Yong Wang, Stephanie Law, Tingyi Gu   +8 more
openaire   +1 more source

Evaporated Polycrystalline Germanium for Near Infrared Photodetection

MRS Proceedings, 1998
AbstractWe present low cost near infrared photodetectors based on polycrystalline Ge film thermally evaporated on a silicon substrate. We demonstrate that, by proper choice of deposition conditions and device configuration, a responsivity of 16mA/W and a response time of a few nanoseconds can be achieved at the wavelength of 1.3micron.
COLACE, Lorenzo, Masini G, Galluzzi F, ASSANTO, GAETANO   +3 more
openaire   +2 more sources