Results 151 to 160 of about 1,852 (195)

Fast Near‐Infrared Photodetection Using III–V Colloidal Quantum Dots

Advanced Materials, 2022
AbstractColloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs.
Bin Sun, Amin Morteza Najarian, Laxmi Kishore Sagar, Margherita Biondi, Min‐Jae Choi, Xiyan Li, Larissa Levina, Se‐Woong Baek, Chao Zheng, Seungjin Lee, Ahmad R. Kirmani, Randy Sabatini, Jehad Abed, Mengxia Liu, Maral Vafaie, Peicheng Li, Lee J. Richter, Oleksandr Voznyy, Mahshid Chekini, Zheng‐Hong Lu, F. Pelayo García de Arquer, Edward H. Sargent   +21 more
openaire   +2 more sources

Interfacial Defect-Mediated Near-Infrared Silicon Photodetection with Metal Oxides

ACS Applied Materials & Interfaces, 2019
Due to recent breakthroughs in silicon photonics, sub-band-gap photodetection in silicon (Si) has become vital to the development of next-generation integrated photonic devices for telecommunication systems. In particular, photodetection in Si using complementary metal-oxide semiconductor (CMOS) compatible materials is in high demand for cost-effective
Jongbum Kim, Lisa J. Krayer, Joseph L. Garrett, Jeremy N. Munday   +3 more
openaire   +2 more sources

Silicon nanomembrane-based near infrared phototransistor with positive and negative photodetections

Nanoscale, 2019
Near infrared photodiode and phototransistor were fabricated on silicon nanomembranes with nanostructures, and both positive and negative photodetections were realized.
Ruobing Pan, Qinglei Guo, Jun Cao, Gaoshan Huang, Yang Wang, Yuzhou Qin, Ziao Tian, Zhenghua An, Zengfeng Di, Yongfeng Mei   +9 more
openaire   +2 more sources

Near Infrared Absorption Enhancement of Graphene for High-Responsivity Photodetection

2019 IEEE 16th International Conference on Group IV Photonics (GFP), 2019
Near-infrared strong light harvesting of graphene is obtained based on multipole resonance interference of silicon nanodisks. The ultrathin design allows the active area with effective generation of photo carriers, paving a new way for small footprint high-speed and high-responsivity photon detection.
Xiyuan Cao, Yi Jin, Aimin Wu, Yijin Zhang   +3 more
openaire   +1 more source

Near-infrared photodetection based on erbium chloride borate nanobelts

Applied Physics Express, 2019
Erbium compound materials have attracted enormous attentions due to their superior optical properties. Under near-infrared laser illumination at 1530 or 976 nm, these nanobelts exhibit efficient up-conversion fluorescence emission in visible region. A hybrid photodetector based on the synthesized erbium chloride borate nanobelts and a cadmium sulfide ...
Yue Fu, Zhaoyang Qi, Xing Xu, Lihui Li, Xiaoxia Wang, Xiaoli Zhu, Xiujuan Zhuang, Anlian Pan   +7 more
openaire   +1 more source

Photodetection in the visible and near-infrared with a silicon pyramidal microdischarge device

The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2004
In this paper, the characterization of microdischarge based photodetectors, fabricated in p-type silicon cut on the (100) plane was reported. The results show the photosensitivities of four different devices to changes in incident optical power from a He-Ne laser operating at 633 nm.
N.P. Ostrom, S.-J. Park, J.J. Ewing, J.G. Eden   +3 more
openaire   +1 more source

Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared

SPIE Proceedings, 2002
The optical properties of an (formula available in paper) type-II superlattice lattice matched to InP(001) was characterized by photo luminescence and near infrared photoresponse. The samples were designed for optical emission near 1.8micrometers and were grown by molecular beam epitaxy.
Gail J. Brown, Joseph E. Van Nostrand, S. M. Hedge, W. J. Siskaninetz, Qianghua Xie   +4 more
openaire   +1 more source

Photodetection in the visible, ultraviolet, and near-infrared with silicon microdischarge devices

Applied Physics Letters, 2002
The photosensitivity of 50 and 100 μm square microdischarge devices having an inverted pyramidal Si cathode has been demonstrated and characterized in the ultraviolet, visible, and near-infrared (350–1200 nm). When operating with 500 Torr of Ne, (100 μm)2 microdischarge devices exhibit responsivities of 700±150 and 570±120 A W−1 at 850 and 660 nm ...
S.-J. Park, J. G. Eden, J. J. Ewing
openaire   +1 more source

Visible-Blind Spectrally Selective Near-Infrared Photodetection with Enhanced Sensitivity

ACS Applied Materials & Interfaces
Near-infrared narrowband photodetectors (NPDs), renowned for their exceptional performance, are of great significance in applications spanning biosensing, health monitoring, and intelligent communication. In this research, we introduced a straightforward and versatile solution-processing approach for fabricating NPDs capable of near-infrared detection.
Linshan Liu, Yawen Guo, Haowen Shang, Yumeng Yang, Xinjun Xu, Zhishan Bo   +5 more
openaire   +2 more sources

Visible to Near‐Infrared Photodetection Based on Ternary Organic Heterojunctions

Advanced Functional Materials, 2019
AbstractOrganic semiconductors have attracted tremendous attention in the past few years, thanks to their excellent flexibility, solution‐processability, low‐cost, chemical versatility, etc. Particularly, organic solar cells based on ternary heterojunctions have shown remarkable device performance, with the recent development of nonfullerene acceptor ...
Wei Li, Yalun Xu, Xianyi Meng, Zuo Xiao, Ruiming Li, Li Jiang, Lihao Cui, Meijuan Zheng, Chang Liu, Liming Ding, Qianqian Lin   +10 more
openaire   +1 more source