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Enhancement of MoTe2 near-infrared absorption with gold hollow nanorods for photodetection
Nano Research, 2020Infrared (IR) light photodetection based on two dimensional (2D) materials of proper bandgap has attracted increasing attention. However, the weak IR absorption in 2D materials, due to their ultrathin attribute and indirect bandgap in multilayer structures, degrades their performance when used as IR photodetectors.
You, Jiawen +13 more
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Near-infrared photodetection and time-resolved photocurrents in cadmium arsenide heterojunctions
Optics LettersDirac and Weyl semimetals, such as cadmium arsenide (Cd3As2), have recently attracted attention for use in high-speed photodetectors that operate at longer infrared wavelengths, where conventional semiconductor-based photodetectors have a limited performance. In this Letter, we explore near-infrared (960 nm) photodetection in a
Jacob Brady +3 more
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Controlling the Growth of Single Nanowires in a Nanowire Forest for near-Infrared Photodetection
ACS Applied Nano Materials, 2018Controlling one-dimension nanowire growth at single nanowire level is vital for building up multifunctional nanowire-based devices and getting insights into nanowire growth mechanisms.
Zhiqiang Tang +8 more
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Hot Electron-Based Near-Infrared Photodetection Using Bilayer MoS2
Nano Letters, 2015Recently, there has been much interest in the extraction of hot electrons generated from surface plasmon decay, as this process can be used to achieve additional bandwidth for both photodetectors and photovoltaics. Hot electrons are typically injected into semiconductors over a Schottky barrier between the metal and semiconductor, enabling generation ...
Wenyi, Wang +5 more
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Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs
MRS Proceedings, 2005AbstractStrain-balanced InxGa1-xAs/InyGa1-yAs superlattices and fractional monolayer In0.532Ga0.468As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD ...
Jun-Xian Fu +3 more
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Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85 A/W at 1.55 mum and 2 V reverse bias, and exhibit reverse dark currents of 100 mA/cm2 and external quantum efficiency up to 68%.
Ali K. Okyay +5 more
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Tunable Near‐Infrared Photodetection Enabled by Plasmonic Effect in Er‐Doped GaAs
Advanced Optical MaterialsAbstractLocalized surface plasmon resonance (LSPR)‐induced electron transfer presents a compelling strategy for enhancing and expanding the functionality of optoelectronic devices. This work demonstrates extended near‐infrared (NIR) photodetection in rare‐earth Er‐doped GaAs by leveraging the LSPR effect of semi‐metallic ErAs nanoparticles (NPs).
Yuanbo Cheng +5 more
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Toward stable gate-controlled GaSb nanowires near-infrared photodetection and photocommunication
Applied Physics LettersSurface states originating from the dangling bonds or native oxide layers are challenging III-V group semiconductor nanowires (NWs) in future electronics and optoelectronics. In this work, a plasma surface treatment technique is adopted for effectively modulating the surface states of GaSb NWs, benefiting the bias-stress stability of field-effect ...
Bowen Yang +6 more
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Enhanced electronic transport and near-infrared photodetection in multilayer Bi-doped InSe
Applied Physics LettersTwo-dimensional (2D) indium selenide (InSe) is a promising semiconductor for next-generation electronic and near-infrared (NIR) photonic devices. However, its practical performance is constrained by low intrinsic carrier concentration, limited NIR absorption, and contact-induced transport barriers.
Xiongli Wu +4 more
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