Results 111 to 120 of about 177,246 (262)

Switching Mechanism and the Scalability of vertical-TFETs

, 2017
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET
Chen, Fan, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Tan, Yaohua   +4 more
core   +1 more source

Engineering Porous Hollow Metal‐Poly(Heptazine Imide) Spheres: An Optimized Synthetic Strategy for Controlling Surface, Morphology, and Properties

Advanced Functional Materials, EarlyView.
Hollow poly(heptazine imide) spheres are prepared through a novel approach that integrates hard templating with ionothermal synthesis. This method enables precise control over surface area, pore volume, hydrophilicity, light absorption, band position, and metal composition. These tunable properties facilitate the customized design of semiconductors for
Lingli Ni, Erik Troschke, Henrik Vorwerk, Shiva Shahbazi Avarvand, Andreas Stihl, Nadzeya Brezhneva, Marius Hermesdorf, Desirée Leistenschneider, Felix H. Schacher, Jacob Schneidewind, Martin Oschatz   +10 more
wiley   +1 more source

On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications

, 2018
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much attention.
Hatcher, R. M., Kittl, J. A., Obradovic, B., Rakshit, T., Reddy, D., Rodder, M. S.   +5 more
core   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

The Reverse Task of Discrete Mechatronic Vibration Systems With Negative Stiffness and Capacitance Elements

Archive of Mechanical Engineering, 2015
Korzystajac z wybranych metod rozkładu funkcji charakterystycznej w postaci powolnosci zsyntezowano mechatroniczne dyskretne układy drgajace. W kazdym przypadku układ zbudowano z mechanicznego modelu dyskretnego oraz piezo aktuatora typu „stack ...
Białas Katarzyna, Buchacz Andrzej, Gałeziowski Damian   +2 more
doaj   +1 more source

Negative Capacitance in Nanocomposite Based on High-Density Polyethylene (HDPE) with Multiwalled Carbon Nanotubes (CNTs). [PDF]

Materials (Basel), 2023
Mouecoucou R, Bonnaud L, Dubois P.
europepmc   +1 more source

Ladder‐Type Benzene‐Perylene Dyes with Efficient Laser Properties in the Near‐IR by Detracting/Activating Low/High Frequency Vibronic Modes

Advanced Functional Materials, EarlyView.
The NNR‐n series of oligomeric nanographenes delivers exceptional emission performance. This work shows that this performance is originated by their ladder‐type structure, which effectively deactivates low‐frequency vibronic modes. This deactivation neglects the main pathway for non‐emissive deactivation, even in the near‐infrared region. The potential
Marcos Díaz‐Fernández, Álex Farrando Pérez, Fernando Gordillo Gámez, Pedro G. Boj, José M. Villalvilla, José A. Quintana, Yanpei Wan, Daniel Aranda, José Manuel Marín‐Beloqui, Jishan Wu, Zebing Zeng, María A. Díaz‐García, Juan Casado   +12 more
wiley   +1 more source

Optimization of NC-LSPR coupled MoS2 phototransistors for high-performance broad-spectrum detection

Nanophotonics
In this work, negative-capacitance (NC) and local surface plasmon resonance (LSPR) coupled MoS2 phototransistors with a gate stack of HZO/AuNPs/Al2O3/MoS2 are fabricated, and the impacts of Al2O3 interlayer-thickness (T AlO) on the LSPR effect, the ...
Jiang Weichao, Deng Yuheng, Su Rui, Xu Jingping, Liu Lu   +4 more
doaj   +1 more source

Large Negative Electronic Compressibility of LaAlO3-SrTiO3 Interfaces with Ultrathin LaAlO3 Layers

, 2012
A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility is found to be
Breitschaft, M., Mannhart, J., Richter, C., Tinkl, V.   +3 more
core   +1 more source

The Influence of Annealing on the Sb Layer in the Synthesis of [001]‐Oriented Sb2Se3 Film for Photoelectrochemical Hydrogen Gas Generation

Advanced Functional Materials, EarlyView.
[001]‐oriented Sb2Se3 film with improved crystallinity and adjusted composition is achieved via a new thermal treatment approach consisting of preliminary annealing of the Sb layer before its selenization. The findings of this work demonstrate enhanced charge carriers' transportation, a stable performance, and an improvement of H2 generation from ...
Magno B. Costa, Moisés A. de Araújo, Joaquim Puigdollers, Pablo Ortega, Teresa Andreu, Cristobal Voz, Edgardo Saucedo, Lucia H. Mascaro   +7 more
wiley   +1 more source