Results 21 to 30 of about 177,246 (262)

Evaluation of the differential capacitance for ferroelectric materials using either charge-based or energy-based expressions [PDF]

Journal of Advanced Dielectrics, 2014
Differential capacitance is derived based upon energy, charge or current considerations, and determined when it may go negative or positive. These alternative views of differential capacitances are analyzed, and the relationships between them are shown ...
C. M. Krowne
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Negative resistance, capacitance in Mn/SiO2/p-Si MOS structure

Materials Research Express, 2020
In this work is that we have manufactured a new structure that had not been studied by researchers before. This structure is Mn/SiO _2 /Si was synthesised by liquid phase epitaxy (LPE) as a metal-oxide- semiconductor (MOS) and can be used as a tunneling ...
A Ashery, Mohamed M M Elnasharty, Ahmed Asaad I Khalil, A A Azab   +3 more
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Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
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Negative Capacitance Clock Distribution [PDF]

IEEE Transactions on Emerging Topics in Computing, 2021
In this paper, we investigate the ever-increasing power issue that is poised to jeopardize the performance and robustness of future low-power microprocessor design. We have observed a tremendous amount of research in low-power clock network design to bolster energy-efficient computing, without, however, any substantial improvement in overall ...
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MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

IEEE Journal of the Electron Devices Society, 2021
We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the
Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, Ming Lu, Yicheng Lu   +5 more
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Experimental Evidence of Ferroelectric Negative Capacitance in Nanoscale Heterostructures [PDF]

, 2011
We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric, Pb(Zr0.2Ti0.8)O3 and dielectric, SrTiO3, the composite capacitance was observed to be larger
Bhowmik, Debanjan, Khan, Asif Islam, Kim, Sung Joo, Pan, Xiaoqing, Ramesh, Ramamoorthy, Salahuddin, Sayeef, Yu, Pu   +6 more
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Ferroelectric negative capacitance

Nature Reviews Materials, 2019
The capacitor is a key element of electronic devices and is characterized by positive capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases and implies a local voltage drop opposed to the overall applied bias. Therefore, a local NC response results in voltage enhancement across the rest of the circuit. Within a suitably
Jorge Íñiguez, Pavlo Zubko, Igor Luk’yanchuk, Andrés Cano   +3 more
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Spatially resolved steady-state negative capacitance [PDF]

Nature, 2019
Negative capacitance is a newly discovered state of ferroelectric materials that holds promise for electronics applications by exploiting a region of thermodynamic space that is normally not accessible1-14. Although existing reports of negative capacitance substantiate the importance of this phenomenon, they have focused on its macroscale manifestation.
Yadav, Ajay K., Nguyen, Kayla X., Hong, Zijian, García-Fernández, Pablo, Aguado-Puente, Pablo, Nelson, Christopher T., Das, Sujit, Prasad, Bhagawati, Kwon, Daewoong, Cheema, Suraj, Khan, Asif I., Hu, Chenming, Íñiguez, Jorge, Junquera, Javier, Chen, Long Qing, Muller, David A., Ramesh, Ramamoorthy, Salahuddin, Sayeef   +17 more
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Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2023
For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been the downward scaling of electronic devices. However, due to approaching the fundamental limits of silicon-based complementary metal-oxide-
Md. Sherajul Islam, Abdullah Al Mamun Mazumder, Changjian Zhou, Catherine Stampfl, Jeongwon Park, Cary Y. Yang   +5 more
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Piezoelectric Shunt Stiffness in Rhombic Piezoelectric Stack Transducer with Hybrid Negative-Impedance Shunts: Theoretical Modeling and Stability Analysis

Sensors, 2019
Negative-capacitance shunted piezoelectric polymer was investigated in depth due to its considerable damping effect. This paper discusses the novel controlled stiffness performance from a rhombic piezoelectric stack transducer with three hybrid negative ...
Leiying He, Wenguang Zheng, Chenxue Zhao, Chuanyu Wu   +3 more
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