Results 41 to 50 of about 3,764,554 (269)
Influence of carbonaceous electrodes on capacitance and breakdown voltage for hybrid capacitor [PDF]
, 2007 This paper presents a new type of capacitor and deals with a hybrid approach where the advantages of two systems, dielectric capacitors and the ultracapacitor are combined.
Flahaut, Emmanuel +5 more
core +1 more source
Impact of the surface roughness on the electrical capacitance [PDF]
, 2006 A new hybrid approach consists to use the advantages of both systems namely the high geometric aspects of the electrodes of the ultracapacitor and the high dielectric strength of polymer materials used in dielectric capacitors.
Flahaut, Emmanuel +6 more
core +1 more source
Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
IEEE Journal of the Electron Devices Society, 2017 The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the ...
Eunah Ko +4 more
doaj +1 more source
Nanophotonics, 2023 We present a comprehensive study of the temperature dependent electronic and optoelectronic properties of a tunnelling injection quantum dot laser. The optical power-voltage (P opt–V) characteristics are shown to be correlated with the current-voltage (I–
Mikhelashvili Vissarion +8 more
doaj +1 more source
The Difference in the Effects of IR-Drop from the Negative Capacitance of Fast Cyclic Voltammograms
Electrochem, 2023 Diffusion-controlled cyclic voltammograms at fast scan rates show peak shifts, as well as decreases in the peak currents from predicted diffusion-controlled currents, especially when the currents are large in a low concentration of supporting ...
Yuanyuan Liu +2 more
doaj +1 more source
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
, 2004 Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core +1 more source
Scaling Design Effects on Surface Buffer IGBT Characteristics
IEEE Journal of the Electron Devices Society, 2022 Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
doaj +1 more source
, 2017 Space charge capacitance and the physical mechanism of negative capacitance in organic light-emitting diodes (OLEDs) by transient current response analysis are investigated for the first time.
Yang Zhang +5 more
core +1 more source
Adaptive piezoelectric shunt damping by self-tuning negative capacitor
Nihon Kikai Gakkai ronbunshu, 2014 A self-tuning negative capacitor is proposed for a piezoelectric shunt damping system; unknown capacitance of the piezoelectric element is estimated by an online estimator without introducing additional sensors and the negative capacitor is tuned based ...
Masafumi OGAWA +3 more
doaj +1 more source
Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?
Фізика і хімія твердого тіла, 2022 We analyze the electric potential and field, polarization and charge, and differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ...
E. A. Eliseev +3 more
doaj +1 more source