Results 21 to 30 of about 46,265 (249)

Evaluation of the differential capacitance for ferroelectric materials using either charge-based or energy-based expressions [PDF]

Journal of Advanced Dielectrics, 2014
Differential capacitance is derived based upon energy, charge or current considerations, and determined when it may go negative or positive. These alternative views of differential capacitances are analyzed, and the relationships between them are shown ...
C. M. Krowne
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Negative Capacitance beyond Ferroelectric Switches [PDF]

ACS Applied Materials & Interfaces, 2018
Negative capacitance transistors are a unique class of switches capable of operation beyond the Boltzmann limit to realize subthermionic switching. To date, the negative capacitance effect has been predominantly attributed to devices employing an unstable insulator with ferroelectric properties, exhibiting a two-well energy landscape, in accordance ...
Ashwani Kumar, Premlal Balakrishna Pillai, Xiaoyao Song, Maria Merlyne De Souza   +3 more
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Ferroelectric negative capacitance [PDF]

Nature Reviews Materials, 2019
The capacitor is a key element of electronic devices and is characterized by positive capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases and implies a local voltage drop opposed to the overall applied bias. Therefore, a local NC response results in voltage enhancement across the rest of the circuit. Within a suitably
Jorge Íñiguez, Pavlo Zubko, Igor Luk’yanchuk, Andrés Cano   +3 more
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Negative resistance, capacitance in Mn/SiO2/p-Si MOS structure

Materials Research Express, 2020
In this work is that we have manufactured a new structure that had not been studied by researchers before. This structure is Mn/SiO _2 /Si was synthesised by liquid phase epitaxy (LPE) as a metal-oxide- semiconductor (MOS) and can be used as a tunneling ...
A Ashery, Mohamed M M Elnasharty, Ahmed Asaad I Khalil, A A Azab   +3 more
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Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
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MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

IEEE Journal of the Electron Devices Society, 2021
We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the
Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, Ming Lu, Yicheng Lu   +5 more
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Negative capacitance in a ferroelectric capacitor

Nature Materials, 2014
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far ...
Khan, Asif Islam, Chatterjee, Korok, Wang, Brian, Drapcho, Steven, You, Long, Serrao, Claudy, Bakaul, Saidur Rahman, Ramesh, Ramamoorthy, Salahuddin, Sayeef   +8 more
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Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic

IEEE Journal of the Electron Devices Society, 2021
Negative capacitance field effect transistors (NCFETs) are modeled in this study, with an emphasis on junction design, implications of complementary logic, and device $V_{t}$ menu enablement.
Reinaldo A. Vega, Takashi Ando, Timothy M. Philip   +2 more
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Piezoelectric Shunt Stiffness in Rhombic Piezoelectric Stack Transducer with Hybrid Negative-Impedance Shunts: Theoretical Modeling and Stability Analysis

Sensors, 2019
Negative-capacitance shunted piezoelectric polymer was investigated in depth due to its considerable damping effect. This paper discusses the novel controlled stiffness performance from a rhombic piezoelectric stack transducer with three hybrid negative ...
Leiying He, Wenguang Zheng, Chenxue Zhao, Chuanyu Wu   +3 more
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Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2023
For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been the downward scaling of electronic devices. However, due to approaching the fundamental limits of silicon-based complementary metal-oxide-
Md. Sherajul Islam, Abdullah Al Mamun Mazumder, Changjian Zhou, Catherine Stampfl, Jeongwon Park, Cary Y. Yang   +5 more
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