Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances [PDF]
Nanoscale Research Letters, 2019 We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET.
Jing Li +4 more
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Negative Capacitance Dual-Gated ISFETs as Ultra-Sensitive pH Sensors [PDF]
ACS Omega, 2023 Fahimul Islam Sakib +3 more
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Electrical capacitance tomography for flow imaging: System model for development of image reconstruction algorithms and design of primary sensors [PDF]
, 1992 A software tool that facilitates the development of image reconstruction algorithms, and the design of optimal capacitance sensors for a capacitance-based 12-electrode tomographic flow imaging system are described.
Huang, SM +6 more
core +7 more sources
Design of sensor electronics for electrical capacitance tomography [PDF]
, 1992 The design of the sensor electronics for a tomographic imaging system based on electrical capacitance sensors is described. The performance of the sensor electronics is crucial to the performance of the imaging system. The problems associated with such a
Huang, SM +9 more
core +7 more sources
Participation in Negative Capacitance of Diffusion-Controlled Voltammograms of Hemin [PDF]
ACS Omega, 2020 Koichi Jeremiah Aoki +2 more
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On the negative capacitance in ferroelectric heterostructures
Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using
Qin, Yuchu, Li, Jiangyu
openaire +3 more sources
Capacitance Tip Timing Techniques in Gas Turbines [PDF]
, 2003 The vibration of turbomachinery blades is an important phenomenon to understand, observe and predict and is the reason for developing a tip timing measurement system.
Lawson, Craig P.
core +7 more sources
Ferroelectric negative capacitance [PDF]
Nature Reviews Materials, 2019 The capacitor is a key element of electronic devices and is characterized by positive capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases and implies a local voltage drop opposed to the overall applied bias. Therefore, a local NC response results in voltage enhancement across the rest of the circuit. Within a suitably
Jorge Íñiguez +3 more
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Negative resistance, capacitance in Mn/SiO2/p-Si MOS structure
Materials Research Express, 2020 In this work is that we have manufactured a new structure that had not been studied by researchers before. This structure is Mn/SiO _2 /Si was synthesised by liquid phase epitaxy (LPE) as a metal-oxide- semiconductor (MOS) and can be used as a tunneling ...
A Ashery +3 more
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Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing
IEEE Journal of the Electron Devices Society, 2020 We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin +3 more
doaj +1 more source