Results 41 to 50 of about 177,246 (262)

Adaptive piezoelectric shunt damping by self-tuning negative capacitor

open access: yesNihon Kikai Gakkai ronbunshu, 2014
A self-tuning negative capacitor is proposed for a piezoelectric shunt damping system; unknown capacitance of the piezoelectric element is estimated by an online estimator without introducing additional sensors and the negative capacitor is tuned based ...
Masafumi OGAWA   +3 more
doaj   +1 more source

Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors

open access: yesMaterials Research Express, 2021
In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET ...
Y G Xiao   +6 more
doaj   +1 more source

Supercapacitor Performance of Nickel-Cobalt Sulfide Nanotubes Decorated Using Ni Co-Layered Double Hydroxide Nanosheets Grown in Situ on Ni Foam [PDF]

open access: yes, 2020
In this study, to fabricate a non-binder electrode, we grew nickel-cobalt sulfide (NCS) nanotubes (NTs) on a Ni foam substrate using a hydrothermal method through a two-step approach, namely in situ growth and an anion-exchange reaction.
Ang, Li   +8 more
core   +1 more source

Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

open access: yesIEEE Journal of the Electron Devices Society, 2017
The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the ...
Eunah Ko   +4 more
doaj   +1 more source

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics

open access: yesIEEE Access, 2020
A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD)
Kai Su   +8 more
doaj   +1 more source

Negative quantum capacitance in graphene nanoribbons with lateral gates

open access: yes, 2013
We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations.
Birner, S.   +6 more
core   +1 more source

Random Discrete Dopant Induced Variability in Negative Capacitance Transistors [PDF]

open access: yes, 2018
In this work we investigate the impact of random discrete dopants (RDD) induced statistical variability in ferroelectric negative capacitance field effect transistors (NCFETs).
Asenov, Asen   +2 more
core   +1 more source

Emergence of a negative charging energy in a metallic dot capacitively coupled to a superconducting island [PDF]

open access: yes, 2007
We consider the hybrid setup formed by a metallic dot, capacitively coupled to a superconducting island S connected to a bulk superconductor by a Josephson junction. Charge fluctuations in S act as a dynamical gate and overscreen the electronic repulsion
A. Zazunov   +5 more
core   +3 more sources

Negative Capacitance for Electrostatic Supercapacitors [PDF]

open access: yesAdvanced Energy Materials, 2019
AbstractThe increasing demand for efficient storage of electrical energy is one of the main challenges in the transformation toward a carbon neutral society. While electrostatic capacitors can achieve much higher power densities compared to other storage technologies like batteries, their energy densities are comparatively low. Here, it is proposed and
Michael Hoffmann   +5 more
openaire   +1 more source

Solid-state memcapacitive system with negative and diverging capacitance

open access: yes, 2019
We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor.
J. Martinez-Rincon   +4 more
core   +1 more source

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