Results 61 to 70 of about 982 (168)

Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers

Results in Physics, 2020
In this paper, we investigated the effect of the central AlGaAs barrier width Lb2 in a resonant tunneling diode (RTD) composed by triple barriers on the current-voltage characteristics, and electronic density of free carriers.
Shaffa Almansour
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Negative Differential Resistance in Single‐Molecule Junctions Based on Heteroepitaxial Spherical Au/Pt Nanogap Electrodes

Advanced Electronic Materials
Single‐molecule junctions exploit the internal structure of molecular orbitals to construct a new class of functional quantum devices. The demonstration of negative differential resistance (NDR) in single‐molecule junctions is direct evidence of quantum ...
Dongbao Yin, Miku Furushima, Eiji Tsuchihata, Seiichiro Izawa, Tomoya Ono, Ryo Shintani, Yutaka Majima   +6 more
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A Memristive Oscillator

Advanced Physics Research
Memristors, or more generally “memristive systems,” are nonlinear electric components that change their resistance depending on a set of state variables.
Yugo Oshima, Taishi Takenobu, Jiang Pu, Keisuke Ishiguro, Reizo Kato, Hiroshi M. Yamamoto, Tetsuro Kusamoto   +6 more
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Photo-Detectors Integrated with Resonant Tunneling Diodes

Sensors, 2013
We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is ...
José M. L. Figueiredo, Charles N. Ironside, Henrique M. Salgado, Luis M. Pessoa, Bruno Romeira   +4 more
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Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD

, 1996
An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior is resulted from a sequential avalanche multiplication and two-stage barrier lowering effect.
Liu, Wen-Chau, Tsai, Jung-Hui, Thei, Kong-Beng, Lin, Kun-Wei, Cheng, C. C., Chen, H. R.   +5 more
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Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching

Advanced Electronic Materials
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next‐generation memory devices and neuromorphic computing systems. NbO2‐based memristors exhibit two regions of NDR at room temperature,
Nitin Kumar, Jong E. Han, Karsten Beckmann, Nathaniel Cady, G. Sambandamurthy   +4 more
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First principle investigation of electronic transport properties of the edge shaped graphene-porphine molecular junction device

AIP Advances, 2018
There has been considerable interest in engaging porphyrin, which plays a central role in a variety of biological processes, as a molecular device for bio-inspired system application.
Abhisek Kole, Diing Shenp Ang
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Electrochemical Study of the Pt Nanoparticles Size Effect in the Formic Acid Oxidation

International Journal of Electrochemical Science, 2012
Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) provided interesting information about the particle size effect during HCOOH electro-oxidation. They were evaluated Pt nanoparticles between 1.5 and 3.7 nm (From Etek Co.).
F. Godínez-Salomón, E. Arce-Estrada, M. Hallen-López   +2 more
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Variations in Local Oscillatory Dynamics in Strained LSMO Thin Films, Observed in Non Equilibrium Transport Studies, for Brain Networks

Advanced Electronic Materials
Strong correlation effects in transition metal oxides and their sensitivity to external stimuli in driving phase transitions have been widely explored.
Hitesh Chhabra, Isidro Fernandez Garcia, Azminul Jaman, Tamalika Banerjee   +3 more
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Penta fever going on: conductive Penta-BCN4 with negative differential resistance (NDR)

Pentagonal 2D structures, surpassing conventional hexagonal sheets, are gaining increasing attention due to their exceptional properties and diverse applications. In this study, we investigate penta-BCN4, a ternary monolayer 2D penta structure with intrinsically exceptional properties.
Mahdi Faghihnasiri, Aidin Ahmadi, Hatef Yousefi-Mashhour, Safwat Abdel-Azeim, Oliver Kühn, Mohamed Shibl   +5 more
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