Results 51 to 60 of about 982 (168)
Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source
MedComm – Biomaterials and Applications, Volume 5, Issue 2, June 2026.Chemotherapy treatment experiments were conducted on three breast cancer cell lines cultured in 2D, spheroids, and the novel 3D support: FN‐silk networks. The breast cancer cells cultured in FN‐silk networks were generally less sensitive to the drugs tested, compared to 2D cultures, potentially giving higher clinical relevance.
Suha Karrani +5 more
wiley +1 more source
Molecular Plant Pathology, Volume 27, Issue 6, June 2026.Partial CsCalS7 suppression reduces phloem callose, starch accumulation and huanglongbing symptoms, supporting a threshold‐based host tolerance. ABSTRACT Huanglongbing (HLB) is the most destructive citrus disease worldwide and is characterised by excessive callose deposition at sieve plates, which has been associated with impaired carbohydrate ...
Laís Moreira Granato +3 more
wiley +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, Volume 12, Issue 9, 11 May 2026.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Electronics Letters, 1996 An Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.15/Ga/sub 0.85/As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differentiaI-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6 mA are obtained, respectively. The high drain
null Laih +4 more
openaire +1 more source
Computer Applications in Engineering Education, Volume 34, Issue 3, May 2026.ABSTRACT In engineering education, a “fidelity‐accessibility trade‐off” persists: accessible web simulations often lack physical accuracy, while complex industrial tools impose heavy cognitive loads. This hinders effective instruction in semiconductor physics in remote, hardware‐constrained environments.
Ali Akyüz +2 more
wiley +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, Volume 36, Issue 31, 16 April 2026.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
Engineering Science and Technology, an International Journal, 2016 Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS)
Kwang-Jow Gan +4 more
doaj +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2018 Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen +14 more
doaj +1 more source