Results 31 to 40 of about 982 (168)

Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

open access: yesResults in Physics, 2021
Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method.
Kwangeun Kim, Jaewon Jang, Hyungtak Kim
doaj   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Can Coercive Vertical Consolidation Improve the Financial Condition of Local Authorities?

open access: yesFinancial Accountability &Management, EarlyView.
ABSTRACT Vertical consolidation of small local authorities providing neighborhood services and large authorities providing strategic services into unitary authorities is assumed to improve financial condition by creating new economies of scale and scope.
Rhys Andrews, Dennis De Widt
wiley   +1 more source

Hydrogen gas sensing negative differential resistance device based on phase transformation of metal hydride

open access: yesNext Materials
Negative differential resistance (NDR) devices receive broad attentions due to their applicability to neuromorphic computing. Previously, we have proposed a novel mechanism for inducing NDR, namely phase transformation-based NDR.
Takashi Harumoto   +3 more
doaj   +1 more source

GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

open access: yesActive and Passive Electronic Components, 2001
A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure.
M. R. Lef   +3 more
doaj   +1 more source

Clinical and Psychosocial Predisposing Factors Associated With Anaesthesia Failure During Non‐Surgical Root Canal Treatment: A National Dental Practice‐Based Research Network Study

open access: yesInternational Endodontic Journal, Volume 59, Issue 9, Page 1817-1830, September 2026.
ABSTRACT Aim This study aimed to identify dentist, patient, and pre‐treatment clinical characteristics associated with local anaesthesia failure during non‐surgical endodontic treatment. Methodology Data were collected from the National Dental Practice‐Based Research Network study entitled “Predicting Outcomes of Root Canal Treatment (PREDICT)”, which ...
Linda J. Liu   +9 more
wiley   +1 more source

Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon

open access: yesMaterials Today Advances
Negative differential resistance (NDR) devices have recently attracted interest as multi-valued logic (MVL) circuits, owing to their folded electrical characteristics.
Kyu Hyun Han   +7 more
doaj   +1 more source

Current-controlled negative differential resistance in small-polaron hopping system

open access: yesAIP Advances, 2019
Current-controlled negative differential resistance (CC-NDR) phenomenon attracts a lot of interest for fabricating the access devices of nonvolatile memory based on crossbar array architectures.
Jing Wu   +8 more
doaj   +1 more source

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

open access: yesIEEE Photonics Journal, 2019
To prepare a desired negative differential resistance (NDR) device by standard complementary-metal–oxide–semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was ...
Jia Cong   +5 more
doaj   +1 more source

Spectral Overlap Limits Optical Gain in Quantum Heterostructure Photonic Devices

open access: yesNanophotonics, Volume 15, Issue 15, 13 August 2026.
Increasing carrier density is commonly expected to enhance optical gain. Here, a universal crossover is identified in which interaction‐induced spectral broadening competes with the intrinsic energy separation of optical states. When Γavg/Δ approaches unity, spectral overlap suppresses transition selectivity and limits gain, revealing a fundamental ...
Nathalie Lander Gower   +9 more
wiley   +1 more source

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