Results 11 to 20 of about 982 (168)

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

IEICE Electronics Express, 2020
Zhao, Fan, Jia, Cong, Guo, Weilian, Xie, Sheng, Chen, Yan, Tee, Clarence Augustine T. H, Huo, Dongquan, Chang, Yanyan, Jiang, Huaiyan   +8 more
openaire   +4 more sources

Ultra robust negative differential resistance memristor for hardware neuron circuit implementation [PDF]

Nature Communications
Neuromorphic computing holds immense promise for developing highly efficient computational approaches. Memristor-based artificial neurons, known for due to their straightforward structure, high energy efficiency, and superior scalability, which enable ...
Yifei Pei, Biao Yang, Xumeng Zhang, Hui He, Yong Sun, Jianhui Zhao, Pei Chen, Zhanfeng Wang, Niefeng Sun, Shixiong Liang, Guodong Gu, Qi Liu, Shushen Li, Xiaobing Yan   +13 more
doaj   +2 more sources

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality [PDF]

Nanomaterials
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects
Bhartendu Papnai, Ding-Rui Chen, Rapti Ghosh, Zhi-Long Yen, Yu-Xiang Chen, Khalil Ur Rehman, Hsin-Yi Tiffany Chen, Ya-Ping Hsieh, Mario Hofmann   +8 more
doaj   +2 more sources

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Applied Sciences, 2021
Negative differential resistance (NDR) is inherent in many electronic devices, in which, over a specific voltage range, the current decreases with increasing voltage.
Vladimir Ulansky, Ahmed Raza, Denys Milke   +2 more
doaj   +1 more source

Negative Differential Resistance and Long-Lived Changes in the Electrical Conductivity of Carbon Composites Induced by Electrothermal Effects

Applied Sciences, 2023
In this study, the negative differential resistance (NDR) phenomenon in two-terminal devices composed of pyrogallol-formaldehyde/ZrO2 composite materials is investigated.
Wrida Ahmed, Lotfi Chouiref, Hassen Dahman, Lassaad El Mir, Henrique L. Gomes   +4 more
doaj   +1 more source

Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering

Advanced Science, 2023
Van der Waals (vdW) heterostructures composed of atomically thin two‐dimensional (2D) materials have more potential than conventional metal‐oxide semiconductors because of their tunable bandgaps, and sensitivities.
Ghulam Dastgeer, Sobia Nisar, Zafar Muhammad Shahzad, Aamir Rasheed, Deok‐kee Kim, Syed Hassan Abbas Jaffery, Liang Wang, Muhammad Usman, Jonghwa Eom   +8 more
doaj   +1 more source

Light‐Enhanced Negative Differential Resistance and Multi‐Level Resistive Switching in Glutamine‐Functionalized MoS2 Quantum Dots for Resistive Random‐Access Memory Devices

Advanced Materials Interfaces, 2023
Negative differential resistance (NDR) with multi‐level resistive switching has been investigated for realizing multi‐level memory devices. However, achieving a high peak‐to‐valley ratio of NDR is a formidable challenge for a reliable multi‐level switch.
Sonia Sharma, Yu‐Ting Chen, Svette Reina Merden S. Santiago, Sheenly Anne Saavedra, Chih‐Lung Chou, Kuan‐Cheng Chiu, Ji‐Lin Shen   +6 more
doaj   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics

Micromachines, 2022
Due to the high manufacturing cost of memristors, an equivalent emulator has been employed as one of the mainstream approaches of memristor research. A threshold-type memristor emulator based on negative differential resistance (NDR) characteristics is ...
Mi Lin, Wenyao Luo, Luping Li, Qi Han, Weifeng Lyu   +4 more
doaj   +1 more source

Effect of quantum barrier width and quantum resonant tunneling through InGaN/GaN parabolic quantum well-LED structure on LED efficiency

Results in Physics, 2021
The effect of quantum barrier width and electric field on the resonant tunneling through the double barrier In0.2Ga0.8N/GaN parabolic-quantum well light-emitting diode (LED) structure and LED efficiency was investigated analytically.
Hind Althib
doaj   +1 more source