Results 21 to 30 of about 982 (168)

Memristive Devices from CuO Nanoparticles

Nanomaterials, 2020
Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable ...
Pundalik D. Walke, Abu ul Hassan Sarwar Rana, Shavkat U. Yuldashev, Verjesh Kumar Magotra, Dong Jin Lee, Shovkat Abdullaev, Tae Won Kang, Hee Chang Jeon   +7 more
doaj   +1 more source

A physics-oriented memristor model with the coexistence of NDR effect and RS memory behavior for bio-inspired computing

Materials Today Advances, 2022
Bio-inspired computing promises fundamentally different ways to advances in artificial intelligence with extreme energy efficiency. Memristive technologies due to the non-volatility, high density, low-power, and synaptic bionic properties can help in ...
X. Ji, Z. Dong, C.S. Lai, G. Zhou, D. Qi
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Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

Nanoscale Research Letters, 2010
The electrical transport through nanoscale contacts of ZnO nanowires bridging the interdigitated Au electrodes shows the negative differential resistance (NDR) effect. The NDR peaks strongly depend on the starting sweep voltage. The origin of NDR through
Lee Ching-Ting, Zhang Yang
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InAs sidewall tunnel diodes enabled by surface states [PDF]

APL Electronic Devices
Negative differential resistance (NDR), where the device current decreases with increasing bias voltage, is a representative phenomenon where quantum mechanics induces counterintuitive physical behavior and offers promising applications such as high ...
Sungjae Hong, Aaron J. Muhowski, Victor J. Patel, Evan M. Anderson, Tzu-Ming Lu   +4 more
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Doping effects on electrical and dynamical characteristics of GaAs / AlGaAs quantum cascade laser [PDF]

مجلة التربية والعلم, 2008
A theoretical analysis of the doping density level influence on the output characteristics of GaAs/Al0.45Ga0.55As triple quantum well QCL emitting at (=9 m) is presented. The employed theoretical model was based on Schrodinger equation analysis.
Erada A. Al-Dabbagh, Ragheed M. Ibrahim
doaj   +1 more source

Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors

Results in Physics
Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been ...
Shih-Hung Cheng, Ting-I Kuo, Er-Feng Hsieh, Wen-Jeng Hsueh   +3 more
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Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

Nanoscale Research Letters, 2019
In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored ...
Yulin Feng, Peng Huang, Zheng Zhou, Xiangxiang Ding, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +6 more
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Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

Frontiers in Chemistry, 2020
In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors.
Dandan Sang, Jiaoli Liu, Xiaofeng Wang, Dong Zhang, Feng Ke, Haiquan Hu, Wenjun Wang, Bingyuan Zhang, Hongdong Li, Bo Liu, Qinglin Wang   +10 more
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Strain-Modulated Electronic Transport Properties in Two-Dimensional Green Phosphorene with Different Edge Morphologies

Crystals
Based on two-dimensional green phosphorene, we designed two molecular electronic devices with zigzag (Type 1) and whisker-like (Type 2) configurations.
Shuo Li, Hai Yang
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Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

Active and Passive Electronic Components, 2002
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room ...
K. F. Yarn
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