Results 161 to 170 of about 37,924 (271)

Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor

open access: yesAdvanced Science, EarlyView.
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim   +11 more
wiley   +1 more source

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

open access: yesAdvanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun   +9 more
wiley   +1 more source

Editorial: Algorithm-hardware co-optimization in neuromorphic computing for efficient AI. [PDF]

open access: yesFront Neurosci
Yousefzadeh A   +3 more
europepmc   +1 more source

Decoding Trap States in Working 2D Perovskite Multi‐Functional Devices

open access: yesAdvanced Science, EarlyView.
Illustration of the photoluminescence spectrum and energy‐level landscape governing trap‐mediated carrier dynamics in 2D F‐PEAI photodetectors. A novel approach capturing dynamic trap occupation and retrapping in devices under operating conditions, directly links defect energetics to carrier transport and enhanced photoresponse in multifunctional ...
Ioannis Leontis   +8 more
wiley   +1 more source

Interlayer Dzyaloshinskii–Moriya Interaction in Synthetic Ferrimagnets for Spiking Neural Networks

open access: yesAdvanced Science, EarlyView.
This work introduces a groundbreaking integration of asymmetric magnetic structures (synthetic ferrimagnets) and antisymmetric magnetic interaction (interlayer Dzyaloshinskii–Moriya interaction) for the first time. It addresses the critical challenge of IL‐DMI detection and shows the discovery of unprecedented analog‐like spin‐orbit torque switching ...
Shen Li   +14 more
wiley   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

open access: yesAdvanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo   +8 more
wiley   +1 more source

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