Results 151 to 160 of about 6,811 (257)

Erratum: Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications. [PDF]

iScience
Ko TJ, Li H, Mofid SA, Yoo C, Okogbue E, Han SS, Shawkat MS, Krishnaprasad A, Islam MM, Dev D, Shin Y, Oh KH, Lee GH, Roy T, Jung Y.   +14 more
europepmc   +1 more source

Radiation Resilient Synthetic Antiferromagnets‐Based Neuromorphic Device for Sea Surface Temperature Reconstruction

Advanced Science, EarlyView.
By leveraging strong antiferromagnetic coupling, radiation‐tolerant synthetic antiferromagnetic synaptic devices are developed. Their intrinsic nonlinearity emulates neuronal activation, while linear and symmetric conductance modulation mimics synaptic plasticity.
Mingxu Song, Jiahao Liu, Ruisheng Hu, Teng Xu, Aihua Tang, Zhihong Zhu   +5 more
wiley   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Multidimensional free shape-morphing flexible neuromorphic devices with regulation at arbitrary points. [PDF]

Nat Commun
Liu J, Jiang C, Yu Q, Ni Y, Yu C, Xu W.
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Kelvin Probe Force Microscopy Imaging of Plasticity in Hydrogenated Perovskite Nickelate Multilevel Neuromorphic Devices. [PDF]

ACS Nano
Dey T, Lai X, Manna S, Patel K, Patel RK, Bisht RS, Zhou Y, Shah S, Andrei EY, Sankaranarayanan SKRS, Kuzum D, Schuman C, Ramanathan S.   +12 more
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices. [PDF]

J Phys Chem Lett
Kim SY, Zhang H, Rubio-Magnieto J.
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO₂-Based Neuromorphic Devices. [PDF]

ACS Nano
Kisiel E, Salev P, Poudyal I, Alspaugh DJ, Carneiro F, Qiu E, Rodolakis F, Zhang Z, Shpyrko OG, Rozenberg M, Schuller IK, Islam Z, Frano A.   +12 more
europepmc   +1 more source