Results 181 to 190 of about 6,811 (257)

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

Advanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas   +10 more
wiley   +1 more source

Neuromorphic Technologies for Neuroengineering: From Adaptive Stimulation to SNN-Based Inference and Deployable Biointerfaces. [PDF]

Sensors (Basel)
Sun Z, Mu A, Hao F, Wang H.
europepmc   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

A hierarchical neuromorphic multi agent framework for energy aware and secure 6G resource optimization using Neuro6G agent. [PDF]

Sci Rep
Al Nuaim A, Qayyum J.
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Topological acoustic synapse for high-dimensional neuromorphic computing. [PDF]

Sci Adv
Chen J, Ige AS, Runge K, Deymier PA, Yan X.   +4 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Advances in Gel-Based Electrolyte-Gated Flexible Visual Synapses for Neuromorphic Vision Systems. [PDF]

Gels
Duan W, Gong Y, Li J, Song X, Wang Z, Zhang Q, Xi Y.   +6 more
europepmc   +1 more source

High‐Performance and Environmentally Stable Organic Electrochemical Transistors Enabled by a Reprocessed Self‐Doped PEDOT Channel

Advanced Electronic Materials, EarlyView.
A simple reprocessing strategy based on freeze‐drying and re‐dissolution is introduced to enhance the electrical performance of self‐doped PEDOT while preserving its intrinsic environmental stability. The reprocessed S‐PEDOT enables organic electrochemical transistors with improved drain current, transconductance, and robust operation under high ...
Ruifeng Xu, Hirokazu Yano, Hidenori Okuzaki, Takao Someya, Tomoyuki Yokota   +4 more
wiley   +1 more source

Printed Organic Memristive Device on Rigid and Flexible Supports for Neuromorphic Applications. [PDF]

Biomimetics (Basel)
Vurro D, Basso SD, Marasso SL, Ballesio A, Tarabella G, D'Angelo P, Erokhin V.   +6 more
europepmc   +1 more source