Results 31 to 40 of about 6,811 (257)
Reminding forgetful organic neuromorphic device networks
Abstract Organic neuromorphic device networks can accelerate neural network algorithms and directly integrate with microfluidic systems or living tissues. Proposed devices based on the bio-compatible conductive polymer PEDOT:PSS have shown high switching speeds and low energy demand. However, as electrochemical systems, they are prone to
Daniel Felder +3 more
openaire +3 more sources
Stochastic memristive devices for computing and neuromorphic applications [PDF]
20 Pages, 5 ...
Siddharth Gaba +4 more
openaire +3 more sources
Laser‐Induced Graphene from Waste Almond Shells
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova +9 more
wiley +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Progresses and outlook in neuromorphic devices [PDF]
In this information era with bursting data, there are three fundamental problems limiting the further development of computing power: The gradually slowing down of Moore’s law, the rapidly increasing energy consumption while scaling down, and the restriction of data transfer between separated memory and processor known as “Von Neumann bottleneck”.
Yanghao Wang +3 more
openaire +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
All‐Electric Nonassociative Learning in Nickel Oxide
Habituation and sensitization represent nonassociative learning mechanisms in both non‐neural and neural organisms. They are essential for a range of functions from survival to adaptation in dynamic environments.
Sandip Mondal +16 more
doaj +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source

