Results 171 to 180 of about 22,264 (276)

Artificial Neuron Based on Electrical Anisotropy from WSe2 Field Effect Transistors

Advanced Science, EarlyView.
An artificial neuron was realized based on the anisotropic mobility of WSe2. Dendritic and axon‐multisynaptic performance of a neuron was achieved with optical and voltage pulses. Recognition accuracy of handwritten digits was obtained to 97% based on the synaptic weight of an artificial neuron.
Qi Sun, Ping Chen, Kun Lv, Chuanwen Chen, Jinsheng Zhu, Zhiling Chen, Yaxian Lu, Ni Zhang, Zongqian Tan, Tao Lin, Caofeng Pan   +10 more
wiley   +1 more source

Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications. [PDF]

Sci Rep
Bashir F, Zahoor F, Alzahrani A, Abbas H.   +3 more
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Memristor Neural Network Training with Clock Synchronous Neuromorphic System. [PDF]

Micromachines (Basel), 2019
Jo S, Sun W, Kim B, Kim S, Park J, Shin H.   +5 more
europepmc   +1 more source

Heterosynaptic Memtransistors Based on Switching Operation Mechanism Using Designed Organic/Inorganic Heterostructures for Neuromorphic Electronics

Advanced Science, EarlyView.
Heteroysynaptic memtransistors are fabricated using a combination of π‐conjugated organic semiconductor TCTA and TMDC MoS2 heterostructure with bottom‐contact architecture. Non‐volatile heterosynaptic and homosynaptic functions such as long‐term plasticity and spike‐timing‐dependent plasticity are emulated by drain and gate pulses based on conduction ...
Taek Joon Kim, Hye Lim Jeong, Sang Wook Song, Dayeong Kwon, Sang‐hun Lee, Jinsoo Joo   +5 more
wiley   +1 more source

Neuromodulated Synaptic Plasticity on the SpiNNaker Neuromorphic System. [PDF]

Front Neurosci, 2018
Mikaitis M, Pineda García G, Knight JC, Furber SB.   +3 more
europepmc   +1 more source

Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor

Advanced Science, EarlyView.
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim, Chansoo Yoon, Haena Yim, Taeyoon Kim, Hoyoung Suh, Woohyeon Ryu, Gwangtaek Oh, Jihoon Jeon, Kwanyoung Oh, Yeonjoo Jeong, Ji‐Won Choi, Bae Ho Park   +11 more
wiley   +1 more source

Structural Plasticity on the SpiNNaker Many-Core Neuromorphic System. [PDF]

Front Neurosci, 2018
Bogdan PA, Rowley AGD, Rhodes O, Furber SB.   +3 more
europepmc   +1 more source

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

Advanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun, Yuyan Wang, Ruofei Hu, Yuyao Lu, Jun Xu, Xinyi Li, Bin Gao, He Qian, Jianshi Tang, Huaqiang Wu   +9 more
wiley   +1 more source

Decoding Trap States in Working 2D Perovskite Multi‐Functional Devices

Advanced Science, EarlyView.
Illustration of the photoluminescence spectrum and energy‐level landscape governing trap‐mediated carrier dynamics in 2D F‐PEAI photodetectors. A novel approach capturing dynamic trap occupation and retrapping in devices under operating conditions, directly links defect energetics to carrier transport and enhanced photoresponse in multifunctional ...
Ioannis Leontis, Karl Jonas Riisnaes, Hoi Tung Lam, Rosanna Mastria, Luisa De Marco, Annalisa Coriolano, Steven Hepplestone, Monica Felicia Craciun, Saverio Russo   +8 more
wiley   +1 more source