Results 211 to 220 of about 22,264 (276)

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

open access: yesAdvanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue   +11 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh   +2 more
wiley   +1 more source

Neuromorphic detection and cooling of microparticles in arrays. [PDF]

open access: yesNat Commun
Ren Y   +6 more
europepmc   +1 more source

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

open access: yesAdvanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam   +3 more
wiley   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

open access: yesAdvanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen   +7 more
wiley   +1 more source

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