Results 71 to 80 of about 10,442 (302)

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee   +5 more
wiley   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

open access: yesAdvanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo   +10 more
wiley   +1 more source

Intermittent Neuromorphic Wearable Systems

open access: yes2025 47th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)
Wearable medical devices have become a focal point of research and development, particularly for their use in long-term monitoring of patients with chronic diseases. These devices offer significant advantages, including early detection of complications, reduced hospital readmission rates, and overall lower healthcare costs by enabling a more proactive ...
Qazi, Junaid Ahmed   +4 more
openaire   +2 more sources

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min   +13 more
wiley   +1 more source

NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory Application

open access: yesIEEE Journal of the Electron Devices Society, 2018
Oscillatory neural networks with nano-oscillators and synapse devices are a promising alternative to implement neuromorphic systems owing to its fast recognition speed and low power consumption.
Donguk Lee   +6 more
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

open access: yesAdvanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone   +8 more
wiley   +1 more source

A systematic method for configuring VLSI networks of spiking neurons

open access: yes, 2011
Neftci E, Chicca E, Indiveri G, Douglas RJ. A systematic method for configuring VLSI networks of spiking neurons. Neural Computation. 2011;23(10):2457-2497.An increasing number of research groups are developing custom hybrid analog/digital very large ...
Rodney Douglas   +11 more
core   +1 more source

A Marr's Three‐Level Analytical Framework for Neuromorphic Electronic Systems

open access: yesAdvanced Intelligent Systems, 2021
Neuromorphic electronics, an emerging field that aims for building electronic mimics of the biological brain, holds promise for reshaping the frontiers of information technology and enabling a more intelligent and efficient computing paradigm.
Yunpeng Guo   +11 more
doaj   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Artificial Olfactory Neuron for an In‐Sensor Neuromorphic Nose

open access: yesAdvanced Science, 2022
A neuromorphic module of an electronic nose (E‐nose) is demonstrated by hybridizing a chemoresistive gas sensor made of a semiconductor metal oxide (SMO) and a single transistor neuron (1T‐neuron) made of a metal‐oxide‐semiconductor field‐effect ...
Joon‐Kyu Han   +7 more
doaj   +1 more source

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