Results 11 to 20 of about 155,207 (299)

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

open access: yesApplied Sciences, 2018
This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group.
Yosuke Nagasawa, Akira Hirano
doaj   +1 more source

Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study

open access: yesJournal of Microelectronic Manufacturing, 2019
The continually increasing number of silicon oxide (SiO2) and nitride (Si3N4) layers in 3D-NAND offers both motivations and challenges for developing all-in-one plasma etch solutions for etching SiO2 and Si3N4 at a selectivity near unity while ...
Du Zhang   +3 more
doaj   +1 more source

Structural, Compositional, and Plasmonic Characteristics of Ti–Zr Ternary Nitride Thin Films Tuned by the Nitrogen Flow Ratio in Magnetron Sputtering

open access: yesNanomaterials, 2020
Ternary nitride gives high diversity and tunability of the plasmonic materials. In this work, highly crystallized ternary (Ti, Zr)N x films were prepared by magnetron co-sputtering with different nitrogen gas flow ratio R n .
Lianlian Chen   +4 more
doaj   +1 more source

Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study

open access: yesJournal of Microelectronic Manufacturing, 2018
Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate (E/R) for SiO2 and Si3N4; however, to attain comparable and high etch rate for both materials is challenging.
Yu-Hao Tsai, Du Zhang, Mingmei Wang
doaj   +1 more source

Supported Molybdenum Carbide and Nitride Catalysts for Carbon Dioxide Hydrogenation

open access: yesFrontiers in Chemistry, 2020
Catalysts based on molybdenum carbide or nitride nanoparticles (2–5 nm) supported on titania were prepared by wet impregnation followed by a thermal treatment under alkane (methane or ethane)/hydrogen or nitrogen/hydrogen mixture, respectively.
Marwa Abou Hamdan   +6 more
doaj   +1 more source

Nitride Wide-Bandgap Semiconductors for UV Nonlinear Optics

open access: yesCrystals, 2023
Nitride wide-bandgap semiconductors possess a wide tunable energy bandgap and abundant coordination anionic groups. This suggests their potential to display nonlinear optical (NLO) properties in the UV wavelength spectrum.
Shihang Li, Lei Kang
doaj   +1 more source

Color Glass by Layered Nitride Films for Building Integrated Photovoltaic (BIPV) System

open access: yesCrystals, 2021
We investigated layered titanium nitride (TiN) and aluminum nitride (AlN) for color glasses in building integrated photovoltaic (BIPV) systems. AlN and TiN are among suitable and cost-effective optical materials to be used as thin multilayer films, owing
Akpeko Gasonoo   +4 more
doaj   +1 more source

Dissolution Behavior of a Titanium Nitride Sponge in Titanium Alloy Melt [PDF]

open access: yesMATEC Web of Conferences, 2020
The dissolution behaviors of titanium nitride titanium sponges in titanium alloy melt were examined. A titanium nitride sponge was produced using nitrogen gas. The titanium nitride sponge featured a porous structure. Porous structures at both the surface
Mizukami Hideo   +2 more
doaj   +1 more source

Synthesis of Non-Cubic Nitride Phases of Va-Group Metals (V, Nb, and Ta) from Metal Powders in Stream of NH3 Gas under Concentrated Solar Radiation

open access: yesChemEngineering, 2021
Using a high-flux solar furnace, loosely compacted powders of Va-group transition metal (V, Nb, and Ta) were reacted with stream of NH3 gas (uncracked NH3 gas) being heated by concentrated solar beam to a temperature (T) range between 600 and 1000 °C ...
Nobumitsu Shohoji   +6 more
doaj   +1 more source

Shear Transformation of Austenite in Steels Considering Stresses’ Effects

open access: yesУспехи физики металлов, 2022
The currently known main mechanisms of martensitic transformation of austenite in steel during cooling, physical models, and schemes of shear rearrangement of the iron crystal lattice during γ→α transformation under the action of internal stresses are ...
S. V. Bobyr, E. V. Parusov, G. V. Levchenko, A. Yu. Borisenko, and I. M. Chuiko
doaj   +1 more source

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