Results 171 to 180 of about 21,691 (311)

Possible Peierls Distortion Through Re₂ Dimer Formation in the LaNiO₂-Type Nitrides LnReN₂ (Ln = Pr, Nd). [PDF]

Angew Chem Int Ed Engl
Werhahn D, Buda AT, Steinberg S, Manuel P, Ritter C, Attfield JP, Kloß SD.   +6 more
europepmc   +1 more source

Preparation of Lutetium Nitride by Direct Nitridation

Preparation of Lutetium Nitride by Direct Nitridation
application/pdf 学術論文 (Article) 380402 ...
openaire  

Understanding Ionic Flow in Nanofluidic Blind‐Hole Anodic Aluminum Oxide (AAO) Membranes for Osmotic Energy Generation

Advanced Materials Technologies, EarlyView.
Anodic aluminum oxide (AAO) membranes have traditionally served as structural supports in osmotic energy systems. Here, blind‐hole AAO membranes are demonstrated as active ion‐selective platforms with tunable nanopore structures. By balancing membrane resistance, ion selectivity, and flux, enhanced performance is achieved, delivering a maximum power ...
Khanh Nhien Vu, Charles Lord, Juan Wang, Andrew D. Abell, Woo Lee, Abel Santos, Cheryl Suwen Law   +6 more
wiley   +1 more source

Microstructure, Mechanical Properties and Additive Manufacturing of Steels. [PDF]

Materials (Basel)
Bidulský R, Bidulská J.
europepmc   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source

Wet Chemical Etching Survey of III-Nitrides

, 1999
Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75 C. Only KOH-based solutions were found to etch AlN and InAlN.
MacKenzie, J. D., Zolper, J. C., Pearton, S.J., Vartuli, C. B., Abernathy, C. R., Hays, D. C., Ren, F., Cho, H., Shul, R. J.   +8 more
core  

Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications. [PDF]

Light Sci Appl
Gao X, Huang Y, Wang R, Sun Y, Wang L.
europepmc   +1 more source

Solid Particle‐Liquid Metal Mixtures for Robust High‐Current Interconnects in Stretchable Electronics and Soft Robotics

Advanced Materials Technologies, EarlyView.
Metallic microparticles dispersed in liquid metal interconnects mitigate electromigration‐induced failure by reconfiguring internal current density distributions. These fillers facilitate the growth of a robust, protective gallium oxide shell at elevated temperatures, shifting the failure threshold toward a thermal limit.
Ethan J. Krings, Calan Brant, Carson Emeigh, Donovan Vincent Jr., Ravi Tutika, Sangjin Ryu, Eric J. Markvicka   +6 more
wiley   +1 more source

Early-d-metal Janus MXenes as near-thermoneutral hydrogen evolution electrocatalysts: role of anion identity and d-band asymmetry. [PDF]

RSC Adv
Dutta S, Banerjee R.
europepmc   +1 more source

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

Advanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee, Rocco Lupoi, Michael J. Gibbons   +2 more
wiley   +1 more source