Results 21 to 30 of about 11,074 (265)

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

open access: yesJournal of Nanotechnology, 2013
We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system.
Jhovani Bornacelli   +3 more
doaj   +1 more source

Influence of Surface Sputtering during High-Intensity, Hot Ion Implantation on Deep Alloying of Martensitic Stainless Steel

open access: yesMetals, 2023
This article is devoted to the study of the effect of ion sputtering on the alloy surface, using the example of martensitic stainless steel AISI 420 with ultrahigh-dose, high-intensity nitrogen ion implantation on the efficiency of accumulation and ...
Alexander Ryabchikov   +5 more
doaj   +1 more source

SURFACE CHARACTERIZATION OF TITANIUM ALLOYS FOR NITROGEN ION IMPLANTATION

open access: yesActa Polytechnica CTU Proceedings, 2017
Ion implantation is one of the modern methods of the surface modification of various materials. Industrially used Ti–6Al–4V titanium alloy and commercially pure Ti grade 2 were characterized using the X–ray diffraction methods.
Petr Vertat, Jan Drahokoupil, Petr Vlcak
doaj   +1 more source

Cutting characteristics of nitrogen-ion-implanted drills.

open access: yesJournal of the Japan Society for Precision Engineering, 1988
This paper describes the influences of nitrogen-ion-implanted drill surfaces and the time of nitrogen-ion-implantation on the cutting characteristics of drills. Experiments were performed by making blind holes. In ion-implanted drills, cutting edge corners sometimes drop due to the deep groove wear on margins, which leads to the drill breakage.
Hiromichi Onikura   +2 more
openaire   +2 more sources

Comparison of base substitutions in response to nitrogen ion implantation and 60Co-gamma ray irradiation in Escherichia coli

open access: yesGenetics and Molecular Biology, 2004
To identify the specificity of base substitutions, a novel experimental system was established based on rifampicin-resistant (Rif r) mutant screening and sequencing of the defined region of the rpoB gene in E. coli.
Xie Chuan-Xiao   +5 more
doaj   +1 more source

Application of Ion Beam Processing Technology in Production of Catalysts

open access: yesInternational Islamic University Malaysia Engineering Journal, 2012
In this paper, the applicability of Ion Beam Processing Technology for making catalysts has been inves-tigated. Ceramic substrates of different shapes and metal fibre tablets were implanted by platinum ions and tested in nitrogen oxides (NOx) and carbon ...
Mykola G. Bannikov, Javed A. Chattha   +1 more
doaj   +1 more source

Microstructural Features and Surface Hardening of Ultrafine-Grained Ti-6Al-4V Alloy through Plasma Electrolytic Polishing and Nitrogen Ion Implantation

open access: yesMetals, 2021
This work studies a near-surface layer microstructure in Ti-6Al-4V alloy samples subjected to plasma electrolytic polishing (PEP) and subsequent high-energy ion implantation with nitrogen (II).
Marina K. Smyslova   +5 more
doaj   +1 more source

Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials [PDF]

open access: yesCoatings, 2012
Titanium nitride and/or nitrogen ion implanted coated dental materials have been investigated since the mid-1980s and considered in various applications in dentistry such as implants, abutments, orthodontic wires, endodontic files, periodontal/oral hygiene instruments, and casting alloys for fixed restorations. Multiple methodologies have been employed
Al Jabbari, Youssef S.   +5 more
openaire   +2 more sources

Nanoscale ion implantation using focussed highly charged ions

open access: yesNew Journal of Physics, 2020
We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond ...
Paul Räcke   +4 more
doaj   +1 more source

P-type conductive Ga2O3 epilayers grown on sapphire substrate by phosphorus-ion implantation technology

open access: yesMaterials Today Advances, 2023
This study utilized various phosphorus-ion implantation techniques, incorporating low, medium, and high doses, to investigate the electrical properties of unintentionally doped β-Ga2O3 epilayers.
Ray Hua Horng   +7 more
doaj   +1 more source

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