Results 1 to 10 of about 10,456,685 (290)

Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories [PDF]

Nanomaterials, 2022
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories.
Víctor Atuchin
exaly   +5 more sources

A reconfigurable hardware infrastructure for evaluating PUFs in non-volatile memories [PDF]

HardwareX
Physical Unclonable Functions (PUFs) are widely recognized for deriving strong cryptographic keys from inherent manufacturing variations in hardware.
Florian Frank, Stefan Katzenbeisser
doaj   +2 more sources

Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method [PDF]

Micromachines, 2019
This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray ...
Paolo Bondavalli, Marie Blandine Martin, Louiza Hamidouche, Alberto Montanaro, Aikaterini-Flora Trompeta, Costas A. Charitidis   +5 more
doaj   +2 more sources

Recent advances in ferroelectric materials, devices, and in-memory computing applications [PDF]

Nano Convergence
Ferroelectric memories have undergone a transformative evolution from conventional perovskite-based materials to modern fluorite-structured ferroelectrics, driven by the pursuit of scalable, low-power, and CMOS-compatible non-volatile memory solutions ...
Hwiho Hwang, Sangwook Youn, Hyungjin Kim
doaj   +2 more sources

Heterogeneous III-V/Si micro-ring laser array with multi-state non-volatile memory for ternary content-addressable memories [PDF]

Nature Communications
In this work, we introduce programmable memory elements embedded within III-V/Si light sources which facilitate non-volatile wavelength tuning. These non-volatile III-V/Si micro-ring lasers (MRLs) exhibit non-volatile wavelength shifts of  ~80 pm with ...
Stanley Cheung, Yanir London, Yuan Yuan, Bassem Tossoun, Yiwei Peng, Yingtao Hu, Thomas Van Vaerenbergh, Di Liang, Chong Zhang, Geza Kurczveil, Raymond G. Beausoleil   +10 more
doaj   +2 more sources

All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories [PDF]

Nature Communications
Strain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift.
Yongzhou Xue, Xiaojuan Ni, Michael Titze, Shei Sia Su, Bohan Wu, Liang Zhang, Chaohan Cui, Saikat Guha, Matt Eichenfield, Linran Fan   +9 more
doaj   +2 more sources

2D (NH4)BiI3 enables non-volatile optoelectronic memories for machine learning [PDF]

Nature Communications
Machine learning is the core of artificial intelligence. Using optical signals for training and converting them into electrical signals for inference, combines the strengths of both, and thus can greatly improve machine learning efficiency ...
Bo Tong, Jiajun Xu, Jinhong Du, Peitao Liu, Tianming Du, Qiang Wang, Langjun Li, Yuning Wei, Jiangxu Li, Jinhua Liang, Chi Liu, Zhibo Liu, Chen Li, Lai-Peng Ma, Yang Chai, Wencai Ren   +15 more
doaj   +2 more sources

Gray counters for non-volatile memories

Memories - Materials, Devices, Circuits and Systems, 2022
New technologies for non-volatile memories combine the speed and byte addressability of current memory technologies with the low cost, density, and non-volatility of current storage technologies. They use energy only when writing or reading data.
Arockia David Roy Kulandai, John Rose, Thomas Schwarz   +2 more
doaj   +1 more source

Temperature Dependence of Electrical Resistance in Ge-Sb-Te Thin Films [PDF]

Materials Research, 2019
Nowadays, the Ge-Sb-Te system is studied extensively for use in the field of both electrical and optical non-volatile memories. The key of this application is based on the changes in the physical properties (electrical conductivity or refractive index ...
Javier Rocca, Jose Luis García, María Andrea Ureña, Marcelo Fontana, Bibiana Arcondo   +4 more
doaj   +1 more source

Nitrogen‐Doped Carbon Quantum Dots on Graphene for Field‐Effect Transistor Optoelectronic Memories

Advanced Electronic Materials, 2023
The development of field‐effect transistor‐based (FET‐based) non‐volatile optoelectronic memories is vital toward innovations necessary to improve computer systems.
Mahima Chaudhary, Chenghao Xin, Zhelu Hu, Dongjiu Zhang, Guillaume Radtke, Xiangzhen Xu, Laurent Billot, Charlotte Tripon‐Canseliet, Zhuoying Chen   +8 more
doaj   +1 more source