Results 11 to 20 of about 18,384 (300)
Structure of Phase‐Separated Ferroelectric/Semiconducting Polymer Blends for Organic Non‐volatile Memories [PDF]
Small, 2010 The phase-separated structure of blends of the ferroelectric polymer P(VDF-TrFE) and the semiconducting polymer P3HT used in organic non-volatile memories is revealed with soft X-ray spectromicroscopy.
Christopher R Mcneill +2 more
exaly +2 more sources
Present and Future Non-Volatile Memories for Space
IEEE Transactions on Nuclear Science, 2010 We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices.
Simone Gerardin, A Paccagnella
exaly +2 more sources
All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories [PDF]
Nature CommunicationsStrain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift.
Yongzhou Xue +9 more
doaj +2 more sources
Organic non-volatile memories from ferroelectric phase-separated blends [PDF]
Nature Materials, 2008 New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two
Kamal Asadi +2 more
exaly +2 more sources
Temperature Dependence of Electrical Resistance in Ge-Sb-Te Thin Films [PDF]
Materials Research, 2019 Nowadays, the Ge-Sb-Te system is studied extensively for use in the field of both electrical and optical non-volatile memories. The key of this application is based on the changes in the physical properties (electrical conductivity or refractive index ...
Javier Rocca +4 more
doaj +1 more source
Nitrogen‐Doped Carbon Quantum Dots on Graphene for Field‐Effect Transistor Optoelectronic Memories
Advanced Electronic Materials, 2023 The development of field‐effect transistor‐based (FET‐based) non‐volatile optoelectronic memories is vital toward innovations necessary to improve computer systems.
Mahima Chaudhary +8 more
doaj +1 more source
Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]
PLoS ONE, 2016 Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo +1 more
doaj +1 more source
Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories
Journal of Low Power Electronics and Applications, 2021 Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan +1 more
doaj +1 more source
Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories
Journal of Low Power Electronics and Applications, 2021 Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance ...
Mohammad Nasim Imtiaz Khan +5 more
doaj +1 more source
Безопасность информационных технологий, 2022 The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov +4 more
doaj +1 more source