Results 11 to 20 of about 10,456,685 (290)

A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories

Journal of Materiomics
BaTiO3 (BTO) ferroelectric films, which are renowned for their lead-free compositions, superior stability, and absence of a wake-up effect, are promising candidate materials in the field of non-volatile memories.
Xingpeng Liu, Chunshu Wei, Tangyou Sun, Fabi Zhang, Haiou Li, Linsheng Liu, Ying Peng, Hezhang Li, Min Hong   +8 more
doaj   +2 more sources

Volatile aldehydes in libraries and archives [PDF]

, 2010
Volatile aldehydes are produced during degradation of paper-based materials. This may result in their accumulation in archival and library repositories. However, no systematic study has been performed so far.
Kolar, J., de Bruin, G., Irena Kralj Cigić, Gerrit de Bruin, Fenech, Ann, Levart, A., Fenech, A., Kralj Cigić, I., Levart, Alenka, Jana Kolar, Ntanos, Konstantinos, May Cassar, Cigic, Irena Kralj, Gibson, L.T., Ntanos, K., Kolar, Jana, Matija Strlič, Cassar, M., Konstantinos Ntanos, Gibson, Lorraine T., Lorraine T. Gibson, de Bruin, Gerrit, Cassar, May, Ann Fenech, Alenka Levart, Strlič, M.   +25 more
core   +5 more sources

Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]

PLoS ONE, 2016
Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo, Marcelo Andrade Macêdo   +1 more
doaj   +1 more source

Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan, Swaroop Ghosh   +1 more
doaj   +1 more source

Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance ...
Mohammad Nasim Imtiaz Khan, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay, Swaroop Ghosh   +5 more
doaj   +1 more source

Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types

Безопасность информационных технологий, 2022
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov, Ivan I. Shvetsov-Shilovskiy, Sergey B. Shmakov, Anastasia V. Ulanova, Anna B. Boruzdina   +4 more
doaj   +1 more source

EDACs and test integration strategies for NAND flash memories [PDF]

, 2010
Mission-critical applications usually presents several critical issues: the required level of dependability of the whole mission always implies to address different and contrasting dimensions and to evaluate the tradeoffs among them. A mass-memory device
Piazza, R., Stefano Di Carlo, Michele Fabiano, Politecnico Di Torino, Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Roberto Piazza, Piazza R., Di Carlo, Stefano   +9 more
core   +1 more source

High Bandwidth and Highly Available Packet Buffer Design Using Multi-Retention Time MRAM

IEEE Access, 2023
Significant challenges are posed in the design of routers and switches by the explosive growth of internet traffic and the stringent requirements for high availability in the research area of computer networks.
Yongwoon Song, Munhyung Lee, Hyukjun Lee
doaj   +1 more source

Machine Learning and Non-volatile Memories

, 2022
This book presents the basics of both NAND flash storage and machine learning, detailing the storage problems the latter can help to solve. At a first sight, machine learning and non-volatile memories seem very far away from each other.
Micheloni, R., Zambelli, C.
core   +1 more source

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Nature Communications, 2017
Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al.
Zhongnan Xi, Jieji Ruan, Chen Li, Chunyan Zheng, Zheng Wen, Jiyan Dai, Aidong Li, Di Wu   +7 more
doaj   +1 more source