Results 31 to 40 of about 10,456,685 (290)

Optimization of the position of TaOx:N-based barrier layer in TaOx RRAM devices

Frontiers in Materials
Resistive Random-Access Memory (RRAM) presents a transformative technology for diverse computing and artificial intelligence applications. However, variability in the high resistance state (HRS) has proved to be a challenge, impeding its widespread ...
Pramod Ravindra, Maximilian Liehr, Rajas Mathkari, Karsten Beckmann, Karsten Beckmann, Natalya Tokranova, Nathaniel Cady   +6 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Nature Communications, 2017
Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al.
Matteo Ghittorelli, Thomas Lenz, Hamed Sharifi Dehsari, Dong Zhao, Kamal Asadi, Paul W. M. Blom, Zsolt M. Kovács-Vajna, Dago M. de Leeuw, Fabrizio Torricelli   +8 more
doaj   +1 more source

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Journal of Low Power Electronics and Applications, 2014
Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low
Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, Jean-Michel Portal   +9 more
doaj   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

CHANNEL CAPACITY FORMULATIONS FOR NON-VOLATILE MEMORIES WITH UNREACHABLE LEVELS

Mağallaẗ Al-kūfaẗ Al-handasiyyaẗ
This paper investigates the channel capacity of unreachable memory cells (UMCs), where a cell is deemed -unreachable if it cannot store values beyond a specific state, .
Haider Abdul Hassan Hadi Al Kim
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source