Results 31 to 40 of about 18,384 (300)
NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing
Research on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
doaj +1 more source
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with carbon, show non-volatile current–voltage characteristics, which are both universal and repeatable.
C. A. Paz de Araujo +11 more
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Duty to Delete on Non-Volatile Memory
3 pages, 8 ...
Na-Young Ahn, Dong Hoon Lee 0001
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A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories
Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
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Data Management on Non-Volatile Memory [PDF]
We are at an exciting point in the evolution of memory technology. Device manufacturers have created a new non- volatile memory (NVM) technology that can serve as both system memory and storage. NVM supports fast reads and writes similar to volatile memory, but all writes to it are persistent like a solid-state disk.
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Memory devices – Volatile memories
In this Encyclopedia entry, volatile random-access memories used for a wide variety of applications are presented. More specifically, the structural and functional properties of static and dynamic RAMs, including cell topologies, cell array organizations,
Gnani, Elena, Baccarani, Giorgio
core +1 more source
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge +8 more
wiley +1 more source
Optimization of the position of TaOx:N-based barrier layer in TaOx RRAM devices
Resistive Random-Access Memory (RRAM) presents a transformative technology for diverse computing and artificial intelligence applications. However, variability in the high resistance state (HRS) has proved to be a challenge, impeding its widespread ...
Pramod Ravindra +6 more
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An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source

