Results 51 to 60 of about 10,456,685 (290)

Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

Nature Communications, 2016
Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin ...
Quoc An Vu, Yong Seon Shin, Young Rae Kim, Van Luan Nguyen, Won Tae Kang, Hyun Kim, Dinh Hoa Luong, Il Min Lee, Kiyoung Lee, Dong-Su Ko, Jinseong Heo, Seongjun Park, Young Hee Lee, Woo Jong Yu   +13 more
doaj   +1 more source

Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications

IEEE Journal of the Electron Devices Society, 2018
The discovery of ferroelectric (FE) properties in binary oxides has enabled CMOS compatible and scalable FE memories. Recently, we reported a simple approach to introduce non-volatility into state-of-the-art dynamic random-access memory stacks that show ...
Milan Pesic, Taide Li, Valerio Di Lecce, Michael Hoffmann, Monica Materano, Claudia Richter, Benjamin Max, Stefan Slesazeck, Uwe Schroeder, Luca Larcher, Thomas Mikolajick   +10 more
doaj   +1 more source

Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects [PDF]

, 2008
Reliability study and investigation of ionizing radiation effects on advanced non-volatile memories. The memories addressed in this thesis are: nanocrystal memories, Phase Change Memories (PCM), and the Oxide-Nitride-Oxide stack. In the thesis there is
Gasperin, Alberto
core  

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Prey and Non-prey Arthropods Sharing a Host Plant: Effects on Induced Volatile Emission and Predator Attraction [PDF]

, 2008
It is well established that plants infested with a single herbivore species can attract specific natural enemies through the emission of herbivore-induced volatiles.
Cornelis A. Hordijk, Marcel Dicke, Dicke, M., Dicke, Marcel, Posthumus, M.A., de Boer, Jetske G., Maarten A. Posthumus, Jetske G. de Boer, Hordijk, Cornelis A., Hordijk, C.A., Boer de, J.G., de Boer, J.G., Posthumus, Maarten A., Boer, J.G., de   +13 more
core   +4 more sources

Memory devices – Volatile memories

, 2023
In this Encyclopedia entry, volatile random-access memories used for a wide variety of applications are presented. More specifically, the structural and functional properties of static and dynamic RAMs, including cell topologies, cell array organizations,
Gnani, Elena, Baccarani, Giorgio
core   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Two Dimensional Parity Check with Variable Length Error Detection Code for the Non-Volatile Memory of Smart Data

Applied Sciences, 2018
This paper proposes a novel technology of memory protection for the Non-Volatile Memory (NVM), applied to smart sensors and smart data. Based on the asymmetry of failure rate between the statuses of bit-0 and bit-1 in the non-volatile memory, as a result
Cihun-Siyong Alex Gong, Yung-Chang Chang, Li-Ren Huang, Chih-Jen Yang, Kung-Ming Ji, Kuen-Long Lu, Jian-Chiun Liou   +6 more
doaj   +1 more source

Use of FRAM memories in spacecrafts [PDF]

, 2011
Non
Maurizio Tranchero, SANSOE', Claudio, TRANCHERO, MAURIZIO, Sansoè C., Tranchero M., Claudio Sansoe   +4 more
core   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source