Results 51 to 60 of about 18,384 (300)
A Spintronic 2M/7T Computation-in-Memory Cell
Computing data-intensive applications on the von Neumann architecture lead to significant performance and energy overheads. The concept of computation in memory (CiM) addresses the bottleneck of von Neumann machines by reducing the data movement in the ...
Atousa Jafari +2 more
doaj +1 more source
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
Toward an innovative stochastic modeling of electric charges loss through dielectric
This paper deals with new stochastic modeling of very low tunneling currents in Non-Volatile Memories. For this purpose, we first develop current measurement method based on Floating Gate technique.
Micolau G. +6 more
doaj +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
A fully programmable, dual‐inductive switchable halide perovskite memristor is demonstrated through precise BDAI2‐mediated interface engineering. This ion‐modulating layer suppresses stochastic filamentary growth, enabling stable, non‐filamentary switching via dynamic barrier modulation.
So‐Yeon Kim, Juan Bisquert
wiley +1 more source
3D Printing Innovations in Polymeric Porous and Patterned Architecture
Polymeric foams occupy a unique structural space between dense solids and open networks, where engineered void fraction governs mechanical compliance, thermal resistance, and mass transport. Additive manufacturing now enables precise spatial control over cellular architecture, unlocking designer foam structures across applications spanning crash ...
Dhanush Patil +13 more
wiley +1 more source
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications
The discovery of ferroelectric (FE) properties in binary oxides has enabled CMOS compatible and scalable FE memories. Recently, we reported a simple approach to introduce non-volatility into state-of-the-art dynamic random-access memory stacks that show ...
Milan Pesic +10 more
doaj +1 more source
A Secure and Persistent Memory System for Non-volatile Memory
15 pages, 15 ...
Pengfei Zuo, Yu Hua 0001, Yuan Xie 0001
openaire +2 more sources
Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects [PDF]
Reliability study and investigation of ionizing radiation effects on advanced non-volatile memories. The memories addressed in this thesis are: nanocrystal memories, Phase Change Memories (PCM), and the Oxide-Nitride-Oxide stack. In the thesis there is
Gasperin, Alberto
core
Backbone modulation in glycolated conjugated polymers governs ion accessibility to side chains, strengthes anion adsorption, and suppresses back‐diffusion. As the number of thiophene units increases, structural reorganization, retention, and synaptic plasticity are enhanced, leading to improved neuromorphic performance in electrolyte‐gated organic ...
Junho Sung +10 more
wiley +1 more source

