Results 71 to 80 of about 18,384 (300)

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

open access: yesAdvanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long   +26 more
wiley   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

open access: yesAdvanced Materials, EarlyView.
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra   +19 more
wiley   +1 more source

Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

open access: yesAdvanced Electronic Materials
Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non‐volatile memories, sensors, actuators, RF devices, and energy harvesters.
Shouzhuo Yang   +10 more
doaj   +1 more source

Dynamic Threshold Detection Using Clustering in the Presence of Channel Mismatch and Additive Noise

open access: yesIEEE Access, 2020
We report on the feasibility of k-means clustering techniques for the dynamic threshold detection of encoded q-ary symbols transmitted over a noisy channel with partially unknown channel parameters.
Kees A. Immink, Kui Cai
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Organic non-volatile ferroelectric memories and opto-electronics [PDF]

open access: yes, 2010
The ability to store information is essential to many of the envisioned applications of organic electronics. To store information, memory devices make use of a physical property that displays hysteresis in response to an external stimulus.
Asadi, Kamal, Asadi, Kamal,
core  

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

open access: yesAdvanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang   +20 more
wiley   +1 more source

Switching dynamics in non-volatile polymer memories

open access: yes, 2008
The time dependence of resistive switching in metal-metal oxide-organic semiconductormetal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds,
Meskers, S. C. J.   +11 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

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