Results 81 to 90 of about 10,456,685 (290)
A ferroelectric semiconductor floating-gate transistor based on van der Waals heterostructures
Nano ResearchWith the explosive expansion of information, there is a growing need for non-volatile memories with high storage density and reconfigurability. Emerging two-dimensional (2D) ferroelectric materials enable the design of various high-performance functional
Xuanye Liu +12 more
doaj +1 more source
Organic non-volatile ferroelectric memories and opto-electronics [PDF]
, 2010 The ability to store information is essential to many of the envisioned applications of organic electronics. To store information, memory devices make use of a physical property that displays hysteresis in response to an external stimulus.
Asadi, Kamal, Asadi, Kamal,
core +3 more sources
Advanced Materials, EarlyView.A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung +9 more
wiley +1 more source
Design of a full 1Mb STT-MRAM based on advanced FDSOI technology
MATEC Web of Conferences, 2017 In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy.
Jabeur Kotb, Prenat Guillaume
doaj +1 more source
Duty to Delete on Non-Volatile Memory
CoRR, 2017 3 pages, 8 ...
Na-Young Ahn, Dong Hoon Lee 0001
openaire +3 more sources
Non-filamentary non-volatile memory elements as synapses in neuromorphic systems
Crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing highly energy-efficient neuromorphic computing systems.
Jang, J. +9 more
core +1 more source
Advanced Materials, EarlyView.Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi +5 more
wiley +1 more source
Soft Skins With Reversible Thickness Morphing: Materials, Mechanisms, and Applications
Advanced Materials, EarlyView.Evolution of electronic skin (e‐skin) technologies toward adaptive, multifunctional soft skins. Phase I highlights early rigid and discrete sensory interfaces. Phase II shows the transition toward flexible, stretchable, and large‐area e‐skin. Phase III captures the emergence of computational e‐skin.
Oliver Ozioko +2 more
wiley +1 more source
High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects
Applied Sciences, 2017 The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target.
Hao Cai +5 more
doaj +1 more source
Advanced Materials, EarlyView.This work introduces sustainable PLA/graphene oxide bioelectronic interfaces featuring electrodes with tunable conductivity and strong electrocatalytic performance. These platforms were used to implement a new method for tuning astrocyte Ca2+ signaling and for the efficient detection of key biomarkers.
Alessandra Scidà +15 more
wiley +1 more source