Results 91 to 100 of about 10,456,685 (290)

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

Non-volatile SRAM memory cells based on ReRAM technology

, 2020
International audienceStatic Random-Access Memories (SRAMs) are very common in today's chip industry due to their speed and power consumption but are classified as volatile memories. Non-Volatile SRAMs (nvSRAMs) combine SRAM features with non-volatility.
Aziza, Hassen, Moreau, Mathieu, Harb, Adnan, Bazzi, Hussein   +3 more
core   +1 more source

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

All-silicon non-volatile optical memory based on photon avalanche-induced trapping

Communications Physics
Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits.
Yuan Yuan, Yiwei Peng, Stanley Cheung, Wayne V. Sorin, Sean Hooten, Zhihong Huang, Di Liang, Jiuyi Zhang, Marco Fiorentino, Raymond G. Beausoleil   +9 more
doaj   +1 more source

Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode

, 2022
1
Yunjeong Hwang, HWANG, HYUNSANG, SEUNYEOL, OH, Yonghun Kim, SEONGJAE, HEO, LAE, YONG JUNG, Seungkwon Hwang, Jung-Dae Kwon, LEE, KYUMIN, JANG, HO JUNG, Byeongjin Park   +10 more
core  

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source

Electrical Resistivity Control for Non-Volatile-Memory Electrodes Induced by Femtosecond Laser Irradiation of LaNiO₃ Thin Films Produced by Pulsed Laser Deposition

Inorganics
In this work, we investigated how the electrical resistivity of LaNiO3 thin films deposited on SrLaAlO4 (100), LaAlO3 (100), and MgO (100) single-crystal substrates by the pulsed laser deposition (PLD) technique can be controlled by femtosecond laser ...
Leonélio Cichetto, Carlos Doñate-Buendía, María Teresa Flores-Arias, Maria Aymerich, João Paulo de Campos da Costa, Eloísa Cordoncillo-Cordoncillo, João Paulo Pereira do Carmo, Oswaldo Hideo Ando, Héctor Beltrán Mir, Juan Manuel Andrés Bort, Elson Longo da Silva, Adenilson José Chiquito   +11 more
doaj   +1 more source

Switching dynamics in non-volatile polymer memories

, 2008
The time dependence of resistive switching in metal-metal oxide-organic semiconductormetal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds,
Meskers, S. C. J., Janssen, R.A.J.; id_orcid, Verbakel, F., Janssen, R. A. J., van den Biggelaar, A. J. M., Leeuw, de, D.M., Meskers, S.C.J., Gomes, H.L., Gomes, Henrique L., Janssen, R.A.J., De Leeuw, Dago M., Biggelaar, van den, A.J.M.   +11 more
core   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source