Results 101 to 110 of about 10,456,685 (290)

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

open access: yesScientific Reports, 2019
Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories ...
Ofogh Tizno   +5 more
doaj   +1 more source

Toward Pore‐Engineered 3D‐Printed Materials for Sorption Water Harvesting, Interfacial Evaporation, and Radiative Cooling

open access: yesAdvanced Materials, EarlyView.
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski   +5 more
wiley   +1 more source

Characterization of emerging non-volatile cryogenic memories

open access: yes
In this thesis, two emerging non-volatile memories, being the resistive random access memory and a ferroelectric capacitor were characterized at cryogenic temperatures.
Mamidala, Karthik Ram
core  

Topological Spin‐Texture Transitions in van der Waals Magnets Revealed by X‐Ray Fourier Transform Holography

open access: yesAdvanced Materials, EarlyView.
Applied here for the first time to a 2D material, high‐resolution synchrotron x‐ray Fourier transform holography directly images topological spin textures in Fe3GeTe2. Combined with atomistic tight‐binding simulations including itinerant electrons and Rashba spin‐orbit coupling, the approach reveals labyrinth, skyrmion, and mixed phases, and uncovers ...
Sourav Chowdhury   +16 more
wiley   +1 more source

Volatile ZrO<sub>2</sub> Antiferroelectric Tunnel Junctions for Rapid, Energy-Efficient Physical Reservoir Computing. [PDF]

open access: yesAdv Sci (Weinh)
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Kwon T   +13 more
europepmc   +2 more sources

A Thermally Programmable ECRAM for Neuromorphic Computing

open access: yes, 2022
1
HWANG, HYUNSANG   +2 more
core  

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

open access: yesAdvanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh   +5 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

Bioinspired Mechanosensitive Organic Artificial Neuron With Programmable Excitatory and Inhibitory Responses via Nonlinear Mechano‐Electrochemical Coupling

open access: yesAdvanced Materials, EarlyView.
Organic artificial neurons couple mechanical deformation and ionic environments through nonlinear mechano‐electrochemical dynamics. Mechanical strain and electrolyte concentration reshape their nonlinear electrical characteristics, programming excitatory or inhibitory spiking responses that mimic mechanosensitive biological neurons and enable ...
Rassen Boukraa   +4 more
wiley   +1 more source

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