The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim +5 more
wiley +1 more source
Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory. [PDF]
Peng Y +9 more
europepmc +1 more source
Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor
Dry‐transferred Bi2Te3 layers enable a planar quantum topological memristor framework. In‐plane topological surface states facilitate ultrafast & low‐power operations. Coexisting analog and digital modes support current‐controlled multilevel states. PQTM exhibits 105 s retention, 103 cycles endurance, and reproducibility across 24 devices.
Mamoon Ur Rashid +12 more
wiley +1 more source
Nanoelectromechanical relay without pull-in instability for high-temperature non-volatile memory. [PDF]
Rana S +6 more
europepmc +1 more source
An on‐demand ultra‐reconfigurable intelligent vision system with hierarchical reconfigurability from device to system levels is demonstrated. Through co‐design of a multi‐paradigm device, reconfigurable circuits, and adaptive system architecture/algorithms, the system enables seamless switching among spiking, non‐spiking, neuromorphic imaging (NI), and
Biyi Jiang +7 more
wiley +1 more source
ABSTRACT The spin Hall effect is a well‐known phenomenon in spintronics that has found numerous applications in digital electronics (memory and logic), but relatively few in analog electronics. Practically the only analog application in widespread use is the spin Hall nano‐oscillator (SHNO) that delivers a high frequency alternating current or voltage ...
Raisa Fabiha +6 more
wiley +1 more source
Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition. [PDF]
Yang K, Liu H, Wang S, Yu W, Han T.
europepmc +1 more source
Transmission of Radio‐Frequency Waves and Nuclear Magnetic Resonance in Lanthanum Superhydrides
1H NMR and radio‐frequency transmission measurements of lanthanum superhydrides at 165 GPa reveals a transition at 260–280 K by a strong suppression of the signal intensity, significant changes in NMR spectra, including a dramatic decrease of the relaxation rate 1/T1T, and pronounced shielding effect, which may have a superconducting nature.
Dmitrii V. Semenok +8 more
wiley +1 more source
Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory. [PDF]
Guo C +7 more
europepmc +1 more source
High-performance ferroelectric non-volatile memory based on La-doped BiFeO3 thin films. [PDF]
Dai W +5 more
europepmc +1 more source

