Results 171 to 180 of about 178,893 (267)

Strategy of programming applications using non-volatile memories and non-volatile memory library

Scientific Papers of Silesian University of Technology. Organization and Management Series, 2017
Hubert ŁOPUSIŃSKI, Mateusz ŁOPUSIŃSKI, Ireneusz J. JÓŹWIAK   +2 more
openaire   +1 more source

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

Advanced Science, EarlyView.
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu, Jiahui Lyu, Jie Li, Koyal Suman Samantaray, Cheolhwa Jang, Yoonmyung Lee, Ji‐Sang Park, Sungjoo Lee   +7 more
wiley   +1 more source

Rotary Electromechanical System Integrating Non‐Reciprocal Memory and Combinational Logic

Advanced Science, EarlyView.
Rotational bistability, interfaced through a conductive network with switchable contacts, unifies logic operations and mechanical memory within a rotary electromechanical system. The author demonstrates how serially coupled configurations of rotationally bistable modules enable reprogrammable sequential logic governed by mechanical state transition and
Shujia Chen, Don Straney, Damiano Pasini
wiley   +1 more source

Effect of Bilayer CeO_2-x/ZnO and ZnO/CeO_2-x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory. [PDF]

Nanoscale Res Lett, 2018
Ismail M, Talib I, Rana AM, Akbar T, Jabeen S, Lee J, Kim S.   +6 more
europepmc   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

Advanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren, Qi Huang, Dingwei Li, Saisai Wang, Yitong Chen, Huihui Ren, Yan Wang, Yingjie Tang, Bowen Zhu   +8 more
wiley   +1 more source

DNA multi-bit non-volatile memory and bit-shifting operations using addressable electrode arrays and electric field-induced hybridization. [PDF]

Nat Commun, 2018
Song Y, Kim S, Heller MJ, Huang X.
europepmc   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer. [PDF]

Nanomaterials (Basel), 2017
Liu YH, Kao CH, Cheng TC, Wu CI, Wang JC.   +4 more
europepmc   +1 more source

Infrared Machine Vision System Based on Te NWs‐Au NPs Plasmonic Optoelectronic Memristor for Motion Detection

Advanced Science, EarlyView.
A plasmonic optoelectronic memristor based on Te nanowires‐Au nanoparticles/ι‐carrageenan enables IR‐programmed and visiblelight‐erased non‐volatile conductance. The all‐photonic write/erase scheme supports in‐sensor logic and real‐time motion detection in darkness.
Jingyao Bian, Yongxing Zhu, Ye Tao, Zhongqiang Wang, Xiaoning Zhao, Ya Lin, Haiyang Xu, Yichun Liu   +7 more
wiley   +1 more source

Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors

Advanced Science, EarlyView.
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang, Miao Zeng, Jingxin Chen, Lei Wang, Sai Jiang, Qian Cao, Xuebo Li, Zekun Hou, Chun Shen, Yulin Gan, Ning Fang, Zhaoliang Liao, Ziyao Zhou, Lin Hao   +13 more
wiley   +1 more source