Results 181 to 190 of about 178,893 (267)
第26回マイクロエレクトロニクスワークショップ(MEWS26) (2013年10月24日-25日. つくば国際会議場), つくば市, 茨城 The 26th Microelectronics Workshop (MEWS26) (October 24-25, 2013. Tsukuba International Congress Center), Tsukuba, Ibaraki, Japan 形態: カラー図版あり Physical characteristics: Original contains color illustrations 資料番号 ...
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Programming Next‐Generation Synthetic Biosensors by Genetic Circuit Design
Synthetic biology enables genetic circuit‐based biosensing to detect diverse targets, process signals, and transduce them into readable outputs or intracellular regulatory activities. However, field deployment and real‐world application of such synthetic biosensors face considerable challenges in sensitivity, specificity, speed, stability, and ...
Yuanli Gao +4 more
wiley +1 more source
Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors
Room‐temperature organic chiral multiferroic field effect transistors are demonstrated, enabling bidirectional control between spin and charge. Specifically, spin polarization affects the ferroelectric polarization, and ferroelectric polarization, in turn, can modulate spin polarization and spin‐dependent transport.
Shilin Li +4 more
wiley +1 more source
On the Ordering Mechanism of Cu+ in 2D van der Waals Multiferroic CuCrP2S6
Temperature‐dependent X‐ray single‐crystal diffuse scattering measurements of CuCrP2S6 in the (H, K, 0) plane reveal the gradual emergence and strengthening of short‐range order upon cooling from 230 to 170 K. At intermediate temperatures, diffuse features become pronounced and eventually lock into sharp incommensurate satellite reflections, indicating
Jiasen Guo +5 more
wiley +1 more source
Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan +11 more
wiley +1 more source
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue +11 more
wiley +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
All Organic Fully Integrated Neuromorphic Crossbar Array
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh +2 more
wiley +1 more source
Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang +8 more
wiley +1 more source

