Results 181 to 190 of about 178,824 (287)
第26回マイクロエレクトロニクスワークショップ(MEWS26) (2013年10月24日-25日. つくば国際会議場), つくば市, 茨城 The 26th Microelectronics Workshop (MEWS26) (October 24-25, 2013. Tsukuba International Congress Center), Tsukuba, Ibaraki, Japan 形態: カラー図版あり Physical characteristics: Original contains color illustrations 資料番号 ...
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Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
All Organic Fully Integrated Neuromorphic Crossbar Array
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh +2 more
wiley +1 more source
ReRAM/CMOS Array Integration and Characterization via Design of Experiments
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen +7 more
wiley +1 more source
Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár +12 more
wiley +1 more source
Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim +3 more
wiley +1 more source
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
wiley +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source

