Results 121 to 130 of about 9,215,429 (289)

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Higher order multi-point fractional boundary value problems with integral boundary conditions

, 2018
In this paper, we are concerned with positive solutions for higher order m–point nonlinear fractional boundary value problems with integral boundary conditions. We establish the criteria for the existence of at least one, two and three positive solutions
Yaslan, İsmail, Günendi, M.
core   +1 more source

Valuation of boundary-linked assets [PDF]

, 2004
This article studies the valuation of boundary-linked assets and their derivatives in continuous-time markets. Valuing boundary-linked assets requires the solution of a stochastic differential equation with boundary conditions, which, often, is not ...
Vidal-Sanz, Jose M., Esteban-Bravo, Mercedes   +1 more
core   +1 more source

A Signed Maximum Principle for Boundary Value Problems for Riemann–Liouville Fractional Differential Equations with Analogues of Neumann or Periodic Boundary Conditions

Mathematics
Sufficient conditions are obtained for a signed maximum principle for boundary value problems for Riemann–Liouville fractional differential equations with analogues of Neumann or periodic boundary conditions in neighborhoods of simple eigenvalues.
Paul W. Eloe, Yulong Li, Jeffrey T. Neugebauer   +2 more
doaj   +1 more source

Global existence and blow-up results for p-Laplacian parabolic problems under nonlinear boundary conditions. [PDF]

J Inequal Appl, 2018
Ding J.
europepmc   +1 more source

On Nonlinear Parabolic Equations with Nonlocal Boundary Condition

Journal of Mathematical Analysis and Applications, 1994
Let \(\emptyset \neq \Omega \subset \mathbb{R}^ n\) be a bounded domain with \(C^ 2\)-boundary and \(T > 0\). Of concern is the semilinear second order initial-boundary value problem \[ \begin{alignedat}{2} \partial_ tu(t,x) - A(t)u(t,x) & = f \bigl( t,x,u(t,x) \bigr), &\qquad (t,x) &\in (0,T) \times \Omega, \\ u(t,x) & = \int_ \Omega \Phi (x,y) u(t,y)
openaire   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

Nonlinear Elliptic Equations with Singular Boundary Conditions

Journal of Mathematical Analysis and Applications, 1997
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
openaire   +2 more sources

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source