Results 191 to 200 of about 23,546 (257)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Fully reversible electric-field control of magnetization in Fe<sub>3</sub>GaTe<sub>2</sub>/CuInP<sub>2</sub>S<sub>6</sub> heterostructure. [PDF]

open access: yesNat Commun
Gou J   +17 more
europepmc   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

open access: yesAdvanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh   +3 more
wiley   +1 more source

Room-temperature ferroelectrically switchable quantum geometry in few-layer WTe<sub>2</sub> for complementary in-memory computing. [PDF]

open access: yesNat Commun
Wang R   +12 more
europepmc   +1 more source

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

open access: yesAdvanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source

Dual-function floating-gate memory driver for energy-efficient integrated display-illumination system. [PDF]

open access: yesNat Commun
Wu H   +20 more
europepmc   +1 more source

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

open access: yesAdvanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad   +4 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

Evaluation of Surface Acoustic Wave Nebulization for NEMS Mass Spectrometry. [PDF]

open access: yesJ Mass Spectrom
Roudini M   +9 more
europepmc   +1 more source

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