Results 191 to 200 of about 280,489 (305)

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Antiferroelectric thin films embedded with ferroelectric switching loop for giant negative electrocaloric effect. [PDF]

Sci Adv
Su P, Chen J, Li J, Wang J, Yang Z, Ge Y, Qu K, Zhong X, Zhong G.   +8 more
europepmc   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

Ferroelectric modulated visual devices with spatial and temporal polarization‐sensitivity for information recognition and processing in visibility‐degraded environments

InfoMat, EarlyView.
Conventional imaging systems often struggle to recognize objects accurately in challenging environments such as underwater or foggy scenes. We developed a polarization‐sensitive artificial vision device inspired by the mantis shrimp that uses advanced two‐dimensional materials and a ferroelectric layer to directly sense, process, and retain visual ...
Zhaoying Dang, Yifei Zhao, Feng Guo, Tao Yu, Hengrui Guo, Jialin Li, Qilong Cui, Qing Li, Jianhua Hao   +8 more
wiley   +1 more source

A thousand-state optoelectronic memory for high-precision spatiotemporal encoding. [PDF]

Nat Commun
Zhou G, Xu Y, Xie X, Zhu C, Ye J, Chai Y.   +5 more
europepmc   +1 more source

Semiconductor memories data applications reliability report

, 1975
Monolithic Memories Inc. (Sunnyvale, Calif.)
core  

Van der Waals ferroelectric semiconductor tunnel junction with ultra‐low switching voltage

InfoMat, EarlyView.
Ferroelectric tunnel junctions are promising building blocks for energy‐efficient memory and brain‐inspired computing, but their practical use is limited by the relatively high voltages required for operation. Here, we develop an all‐two‐dimensional ferroelectric tunnel junction based on AgBiP2Se6 that enables reliable memory operation below 0.2 V and ...
Fuqin Sun, Ruihuan Duan, Ziqian Xin, Yinxiao Li, Bingyuan Xue, Zihua Tian, Kejie Guan, Fan Liu, Xiaoshuang Gou, Yingyi Wang, Weifan Zhou, Cheng Zhang, Lin Liu, Zhao Wang, Jia Shi, Zheng Liu, Xiaowei Wang, Ting Zhang   +17 more
wiley   +1 more source

CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures. [PDF]

Nanomaterials (Basel)
Chen G, Fujii T, Yamada T, Hata K.
europepmc   +1 more source

Bi4Ti2.85Zr0.15O12/Nb: SrTiO3‐Based Artificial Optic Neuron for Synaptic Plasticity Simulation and Light‐Controlled Neuromorphic Computing

Materials Genome Engineering Advances, EarlyView.
An optoelectronic synapse based on Zr‐doped Bi4Ti3O12 exhibits learning/forgetting mimicry and achieves 94.2% accuracy on MNIST, demonstrating a novel pathway for high‐performance neuromorphic computing. ABSTRACT This study enhanced the optoelectronic properties of BIT (Bi4Ti3O12) through Zr doping at the B site, constructing an Au/Bi4Ti2.85Zr0.15O12 ...
Dongping Yang, Zhilong Chen, Zhenhua Tang, Qijun Sun, Yanping Jiang, Xingui Tang   +5 more
wiley   +1 more source