Results 211 to 220 of about 379,352 (250)

High-voltage bipolar mode JFET with normally off characteristics

IEEE Electron Device Letters, 1985
The first realization of a power vertical JFET operated in the bipolar mode (BJFET) with normally off behavior is reported. The structure combines minority carrier injection from the gate region in the on-state, and lateral pinch-off of the channel, due to the built-in voltage, in the off-state.
BELLONE, Salvatore, ANTONIO CARUSO, PAOLO SPIRITO, G. F. VITALE, GIOVANNI BUSATTO, GIUSEPPE COCORULLO, G. FERLA, S. MUSUMECI   +7 more
openaire   +4 more sources

AlN/GaN heterostructures for normally-off transistors

Semiconductors, 2017
The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed.
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin   +10 more
openaire   +1 more source

Normally-off GaN MOSFETs on insulating substrate

Solid-State Electronics, 2013
Abstract Several types of GaN MOSFETs with normally-off operation have been fabricated on insulating substrate and evaluated. In recessed-gate GaN MOSFET, the threshold voltage ( V th ) can be easily controlled, but the current drivability is modest and needs to be improved by adopting appropriate device structure and/or process.
Dong-Seok Kim, Ki-Sik Im, Ki-Won Kim, Hee-Sung Kang, Do-Kywn Kim, Sung-Jae Chang, Youngho Bae, Sung-Ho Hahm, Sorin Cristoloveanu, Jung-Hee Lee   +9 more
openaire   +2 more sources

GaAs Integrated Logic with Normally-Off MESFETs

Extended Abstracts of the 1978 International Conference on Solid State Devices and Materials, 1978
The normally-off GaAs MESFET digital integrated circuits which feature power dissipation as low as 0.2 mW per gate and sub-nanosecond delay time have been developed. To investigate the power-speed performance of the ICs, ring oscillators with different fan-in/fan-out have been fabricated. For fan-in/fan-out = 1/1 , a propagation delay time is typically
Katsuhiko Suyama, Hirotsugu Kusakawa, Masumi Fukuta   +2 more
openaire   +1 more source

Modeling of GaN-Based Normally-Off FinFET

IEEE Electron Device Letters, 2014
In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear ...
Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chenming Hu   +5 more
openaire   +1 more source

Normally-Off Computing

2017
Takashi Nakada, Hiroshi Nakamura
openaire   +2 more sources

Optical Effect in Normally-Off GaAs MESFET

physica status solidi (a), 1985
R. Gulati, S. B. Kaushik, P. L. Trivedi, H. S. Sharma, I. Chandra, B. L. Sharma   +5 more
openaire   +1 more source

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

Carbon, 2021
Feng Wen, , Hong-Xing Wang
exaly  

Normally-off polycrystalline C H diamond MISFETs with MgF2 gate insulator and passivation

Diamond and Related Materials, 2021
Zhang Jincheng, Zeyang Ren, Kai Su
exaly  

Classes of normally and nearly normally torsion-free monomial ideals

Communications in Algebra, 2022
Ayesha Asloob Qureshi, Kazem Khashyarmanesh, Mehrdad Nasernejad   +2 more
exaly