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Tri-Gate Normally-Off GaN Power MISFET [PDF]

open access: yesIEEE Electron Device Letters, 2012
We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field- effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 μA/mm and Vgs = 0.
Bin Lu   +2 more
exaly   +3 more sources
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Normally-off technologies for healthcare appliance

2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC), 2014
Battery mass and power consumption of wearable system must be reduced because the key factors affecting wearable system usability are miniaturization and weight reduction. This report describes a wearable biosignal monitoring system using normally-off technologies to minimize the power consumption.
Shintaro Izumi   +3 more
openaire   +1 more source

Normally-off computing project: Challenges and opportunities

2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC), 2014
Normally-Off is a way of computing which aggressively powers off components of computer systems when they need not to operate. Simple power gating cannot fully take the chances of power reduction because volatile memories lose data when power is turned off. Recently, new non-volatile memories (NVMs) have appeared.
Hiroshi Nakamura   +2 more
openaire   +1 more source

RRAM-based FPGA for "normally off, instantly on" applications

Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, 2012
"Normally off, instantly on" applications are becoming common in our environment. They range from healthcare to video surveillance. As the number of applications and their associated performance requirements grow rapidly, more and more powerful, flexible and power efficient computing units are necessary.
Turkyilmaz, Ogun   +7 more
openaire   +1 more source

Spin-RAM for Normally-Off Computer

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 2011
Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off ...
K. Ando   +28 more
openaire   +1 more source

Threshold voltages of normally off MESFET's

IEEE Transactions on Electron Devices, 1972
The threshold voltage of "normally off" Si-MESFET's for simple dc-coupled circuits is defined and computed with a two-dimensional device model, taking into account carrier velocity saturation and diffusion. The influence of the main parameters, gate length, conducting-layer thickness, and doping is investigated outside the range of Shockley's equations.
W. Jutzi, M. Reiser
openaire   +1 more source

Normally-Off Mesfet Analogue Circuits

16th European Microwave Conference, 1986, 1986
A very small (0.04 mm2) monolithic DC to 2GHz, input/output matched, amplifier using enhancement mode GaAs MESFET's has been realized, to demonstrate the analog circuits capability of this type of transistor. The gain of the amplifier is 12dB, its noise factor is 2dB.
V. Pauker   +3 more
openaire   +1 more source

Normally-off computing for IoT systems

2015 International SoC Design Conference (ISOCC), 2015
It is important to thoroughly reduce energy consumption for IoT systems. Normally-Off is a way of computing which aggressively powers off components of computer systems when they need not to operate. Recently, new non-volatile memories (NVMs) have appeared. We introduce normally-off computing using these NVMs.
Takashi Nakada   +2 more
openaire   +1 more source

Computers that are normally off

Physics Today, 2014
Nonvolatile, spin-transfer torque components could greatly reduce the need for standby power when computers are idle.
openaire   +1 more source

Normally-off technology at Philips microwave

III-Vs Review, 1991
Abstract Philips Microwave GaAs Foundry and ASIC Design Centre at Limeil, near Paris, has a calibrated 0.7μm ERO7AD process which is particularly well suited to low dc power analogue and digital ICs. In a clear demonstration of the capability of the process, new structures have been used to improve the performance of a family of low noise amplifiers.
D. Meignant, P. Philippe, N. Caglio
openaire   +1 more source

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