Results 191 to 200 of about 2,989,727 (250)
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IEEE Electron Device Letters, 2023
In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices exhibit alloyed Ohmic contact resistance of about $0.35 \Omega \cdot $ mm, low
Jingshu Guo +12 more
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In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices exhibit alloyed Ohmic contact resistance of about $0.35 \Omega \cdot $ mm, low
Jingshu Guo +12 more
semanticscholar +1 more source
Applied Physics Letters, 2023
In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure.
Yuncong Cai +11 more
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In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure.
Yuncong Cai +11 more
semanticscholar +1 more source
IEEE Transactions on Electron Devices, 2023
In this article, a low-leakage-current and high-breakdown-voltage normally OFF p-GaN gate high-electron-mobility transistor (HEMT) on a Si substrate with low-damage NH3 plasma pretreatment was investigated.
Nengtao Wu +7 more
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In this article, a low-leakage-current and high-breakdown-voltage normally OFF p-GaN gate high-electron-mobility transistor (HEMT) on a Si substrate with low-damage NH3 plasma pretreatment was investigated.
Nengtao Wu +7 more
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1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current
IEEE Transactions on Electron Devices, 2021In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage ( ${V}_{BR}$ ) and excellent saturation drain current.
Huaxing Jiang +5 more
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IEEE Electron Device Letters, 2022
Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage ( $\text{V}_{\text {th}}$ ) more than 2.5 V and a low on- resistance of $5.5\Omega \cdot $ mm have been achieved by an improved regrowth technique with in-situ SiNx passivation.
Jiaqi He +8 more
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Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage ( $\text{V}_{\text {th}}$ ) more than 2.5 V and a low on- resistance of $5.5\Omega \cdot $ mm have been achieved by an improved regrowth technique with in-situ SiNx passivation.
Jiaqi He +8 more
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International Symposium on Power Semiconductor Devices and IC's, 2022
In this work, we designed and fabricated a p-NiO gate heterojunction field effect transistor (HJFET) with gate-recessed architecture based on β-Ga2O3. The gate recess process was utilized, and wet chemical etching and annealing process were performed to ...
Xuanze Zhou +4 more
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In this work, we designed and fabricated a p-NiO gate heterojunction field effect transistor (HJFET) with gate-recessed architecture based on β-Ga2O3. The gate recess process was utilized, and wet chemical etching and annealing process were performed to ...
Xuanze Zhou +4 more
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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
IEEE Transactions on Electron Devices, 2022A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF6-based etching gas.
Hsiang-Chun Wang +12 more
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Over 1200 V Normally-OFF p-NiO Gated AlGaN/GaN HEMTs on Si With a Small Threshold Voltage Shift
IEEE Electron Device Letters, 2022In this letter, we demonstrated a normally-off AlGaN/GaN HEMT using p-NiO as a gate stack combined with a recess structure. The fabricated HEMT exhibits a positive threshold voltage of 1.73 V, a saturation output current of 524 mA/mm, a small ...
Hui Guo +11 more
semanticscholar +1 more source