Results 211 to 220 of about 2,989,727 (250)

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator With Drain Current Density Over 300 mA/mm

IEEE Transactions on Electron Devices, 2022
A novel method to fabricate the oxidized silicon-terminated (C–Si–O) diamond metal-oxide-semi- conductor field-effect transistors (MOSFETs) by replacing the retained SiO2 masks with an atomic layer deposition (ALD)-Al2O3 film as the main gate insulator ...
Yu Fu, Yuhao Chang, Xiaohua Zhu, R. Xu, Yuehang Xu, H. Kawarada   +5 more
semanticscholar   +1 more source

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

IEEE Electron Device Letters, 2021
In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal.
Chia-Hao Liu, H. Chiu, Hsiang-Chun Wang, H. Kao, Chong-Rong Huang   +4 more
semanticscholar   +1 more source

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

IEEE transactions on power electronics, 2021
With a reverse p-n junction in the gate stack design, this work demonstrates a 1.2 kV/25 A normally off p-n junction/AlGaN/GaN high-electron mobility transistor (PNJ-HEMT).
F. Zhou, Weizong Xu, F. Ren, Yuanyang Xia, Leke Wu, T. Zhu, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu   +9 more
semanticscholar   +1 more source

Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Semiconductor Science and Technology, 2021
In this work, a solar-blind ultraviolet (UV) photodetector based on a three-terminal enhancement-mode (E-mode) Si-doped β-Ga2O3 (β-Ga2O3:Si) metal-semiconductor field-effect transistor structure is demonstrated, whose threshold voltage (V th) and ...
Zeng Liu, Maolin Zhang, Lili Yang, Shan Li, Shaohui Zhang, Kaikai Li, Peigang Li, Yufeng Guo, Weihua Tang   +8 more
semanticscholar   +1 more source

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE transactions on power electronics, 2020
A 1200-V/100-mΩ silicon carbide (SiC) junction field-effect-transistor (JFET)/ gallium nitride (GaN) high-electron-mobility-transistor (HEMT) hybrid power switch is demonstrated, which features a flip-chip copackaged cascode configuration incorporating a
Gang Lyu, Yuru Wang, Jin Wei, Zheyang Zheng, Jiahui Sun, Long Zhang, K. J. Chen   +6 more
semanticscholar   +1 more source

Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping

Journal of Physics D: Applied Physics, 2020
III-nitrides and beta-phase gallium oxide (β-Ga2O3) are currently two intensively investigated wide bandgap semiconductor materials for power electronics. Due to the relatively low lattice mismatch between the two material systems and the availability of
K. Song, Haochen Zhang, H. Fu, Chen Yang, Rajendra Singh, Yuji Zhao, Haiding Sun, S. Long   +7 more
semanticscholar   +1 more source

Normally-Off- $\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure

IEEE Electron Device Letters, 2020
In this work, we have demonstrated normally-off $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm
Zhaoqing Feng, Q. Feng, Hong Zhuo, Jincheng Zhang, Y. Hao, Xusheng Tian, Zhe Li, Zhuangzhuang Hu, Yanni Zhang, X. Kang, Jing Ning, Yachao Zhang, Chunfu Zhang   +12 more
semanticscholar   +1 more source

Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV

International Electron Devices Meeting, 2019
We demonstrate record-high performance in normally-off single and multi-fin b-Ga2O3 vertical power transistors. The effective channel mobility is significantly improved up to ~130 cm2/V•s with a post-deposition annealing process. With a fin-channel width
Wenshen Li, K. Nomoto, Zongyang Hu, Tohru Nakamura, D. Jena, H. Xing   +5 more
semanticscholar   +1 more source

Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiOx Gate Materials

IEEE Transactions on Electron Devices, 2020
A normally OFF hydrogen-terminated diamond (H-terminated diamond) field-effect transistor (FET) has been successfully achieved with Ti/TiOx gate materials.
Minghui Zhang, Wei Wang, Genqiang Chen, H. Abbasi, Yanfeng Wang, F. Lin, Feng Wen, Kaiyue Wang, Jing-wen Zhang, Renan Bu, Hongxing Wang   +10 more
semanticscholar   +1 more source

Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer

IEEE Electron Device Letters, 2019
Normally-off HEMTs have been fabricated with regrown p-GaN gate and SiNx passivation by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a high-temperature passivation-first technique with no incompatibility issues ...
Y. Zhong, Shuai Su, Xin Chen, Yu Zhou, Junlei He, Hongwei Gao, Xiaoning Zhan, Xiaolu Guo, Jianxun Liu, Qian Sun, Hui Yang   +10 more
semanticscholar   +1 more source